Method of manufacturing a SiOCN film, substrate processing apparatus, and recording medium

1. A method of manufacturing a semiconductor device, comprising forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after modifying an uppermost surface of the substrate by supplying a nitriding gas to the substrate, the cycle comprising performing the following steps in the following order:

(a) forming a first layer comprising a first carbon-containing layer and a predetermined element-containing layer by performing:

(a-1) forming the first carbon-containing layer directly on a portion of the uppermost surface of the substrate, which is modified by the nitriding gas, by supplying a carbon-containing gas to the substrate; and

(a-2) forming the predetermined element-containing layer directly on the uppermost surface of the substrate, which is modified by the nitriding gas and has the first carbon-containing layer formed on the portion thereof, by supplying a predetermined element-containing gas to the substrate;

(b) forming a second layer comprising the first carbon-containing layer, the predetermined element-containing layer and a second carbon-containing layer by forming the second carbon-containing layer directly on the predetermined element-containing layer of the first layer by supplying the carbon-containing gas to the substrate;

(c) oxidizing the second layer to form a third layer containing the predetermined element, oxygen and carbon by supplying an oxidizing gas to the substrate; and

(d) forming a fourth layer containing the predetermined element, oxygen, carbon and nitrogen and modifying an uppermost surface of the fourth layer by supplying the nitriding gas to the substrate to nitride the third layer.

2. The method of claim 1 , wherein the first carbon-containing layer is formed by adsorbing the carbon-containing gas onto the portion of the uppermost surface of the substrate, which is modified by the nitriding gas.

3. The method of claim 2 , wherein the adsorption of the carbon-containing gas onto the portion of the uppermost surface of the substrate, which is modified by the nitriding gas, is unsaturated.

4. The method of claim 2 , wherein at least a portion of the first carbon-containing layer is formed by substituting the carbon-containing gas for a portion of the nitriding gas adsorbed onto at least the portion of the uppermost surface of the substrate, which is modified by the nitriding gas.

5. The method of claim 2 , wherein at least a portion of the first carbon-containing layer is a discontinuous layer formed by substituting the carbon-containing gas for a portion of the nitriding gas adsorbed onto at least the portion of the uppermost surface of the substrate, which is modified by the nitriding gas.

6. The method of claim 1 , wherein the first carbon-containing layer and the second carbon-containing layer are discontinuous layers, respectively.

7. The method of claim 1 , wherein the predetermined element comprises a semiconductor element or a metal element.

8. The method of claim 1 , wherein the predetermined element comprises silicon.

9. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate in a process chamber by performing a cycle a predetermined number of times after modifying an uppermost surface of the substrate by supplying a nitriding gas to the substrate in the process chamber, the cycle comprising performing the following steps in the following order:

(a) forming a first layer comprising a first carbon-containing layer and a predetermined element-containing layer by performing:

(a-1) forming the first carbon-containing layer directly on a portion of the uppermost surface of the substrate, which is modified by the nitriding gas, by supplying a carbon-containing gas to the substrate; and

(a-2) forming the predetermined element-containing layer directly on the uppermost surface of the substrate, which is modified by the nitriding gas and has the first carbon-containing layer formed on the portion thereof, by supplying a predetermined element-containing gas to the substrate;

(b) forming a second layer comprising the first carbon-containing layer, the predetermined element-containing layer and a second carbon-containing layer by forming the second carbon-containing layer directly on the predetermined element-containing layer of the first layer by supplying the carbon-containing gas to the substrate;

(c) oxidizing the second layer to form a third layer containing the predetermined element, oxygen and carbon by supplying an oxidizing gas to the substrate; and

(d) forming a fourth layer containing the predetermined element, oxygen, carbon and nitrogen and modifying an uppermost surface of the fourth layer by supplying the nitriding gas to the substrate to nitride the third layer.

10. The method of claim 1 , wherein the second carbon-containing layer is formed by adsorbing the carbon-containing gas onto a portion of a surface of the predetermined element-containing layer.

11. The method of claim 10 , wherein the adsorption of the carbon-containing gas onto the portion of the surface of the predetermined element-containing layer is unsaturated.

12. The method of claim 1 , wherein the first carbon-containing layer and the second carbon-containing layer are discontinuous adsorption layers of the carbon-containing gas.