COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A compound semiconductor device includes: a compound semiconductor stacked structure; a source electrode and a drain electrode formed separately from each other above the compound semiconductor stacked structure; a gate electrode formed between the source electrode and the drain electrode above the compound semiconductor stacked structure; and a passivation film formed above the compound semiconductor stacked structure and made of an insulating material containing Al, in which the passivation film is in a non-contact state with the compound semiconductor stacked structure under the source electrode and the drain electrode.
1 . A compound semiconductor device comprising:
a compound semiconductor stacked structure;
a pair of first electrodes that are formed separately from each other above the compound semiconductor stacked structure;
a second electrode that is formed between the first electrodes above the compound semiconductor stacked structure; and
a protective film that is formed above the compound semiconductor stacked structure and made of an insulating material containing aluminum, wherein
the protective film is in a non-contact state with the compound semiconductor stacked structure under the first electrodes.
2 . The compound semiconductor device according to claim 1 , further comprising:
a foundation layer that is formed under the first electrodes, wherein
the protective film is positioned above the compound semiconductor stacked structure via the foundation layer under the first electrodes.
3 . The compound semiconductor device according to claim 1 , wherein
the protective film is formed separately from the first electrode between the first electrode and the second electrode.
4 . The compound semiconductor device according to claim 1 , wherein
the protective film is formed of AlN or AlO as a material.
5 . The compound semiconductor device according to claim 1 , wherein
the second electrode is formed above the compound semiconductor stacked structure via the protective film.
6 . The compound semiconductor device according to claim 1 , wherein
the second electrode comes into contact with the compound semiconductor stacked structure through an opening formed in the protective film.
7 . A method of manufacturing a compound semiconductor device comprising:
forming a compound semiconductor stacked structure;
forming a protective film made of an insulating material containing aluminum above the compound semiconductor stacked structure;
forming a pair of first electrodes separated from each other above the compound semiconductor stacked structure; and
forming a second electrode between the first electrodes above the compound semiconductor stacked structure, wherein
the protective film is in a non-contact state with the compound semiconductor stacked structure under the first electrodes.
8 . The method of manufacturing the compound semiconductor device according to claim 7 , further comprising:
forming a foundation layer under the first electrodes, wherein
the protective film is positioned above the compound semiconductor stacked structure via the foundation layer under the first electrodes.
9 . The method of manufacturing the compound semiconductor device according to claim 7 , wherein
the protective film is formed separately from the first electrode between the first electrode and the second electrode.
10 . The method of manufacturing the compound semiconductor device according to claim 7 , wherein
the protective film is formed of AlN or AlO as a material.
11 . The method of manufacturing the compound semiconductor device according to claim 7 , wherein
the second electrode is formed above the compound semiconductor stacked structure via the protective film.
12 . The method of manufacturing the compound semiconductor device according to claim 7 , wherein
the second electrode comes into contact with the compound semiconductor stacked structure through an opening formed in the protective film.
13 . A power supply circuit comprising:
a transformer; and
a high-voltage circuit and a low-voltage circuit sandwiching the transformer, the high-voltage circuit comprising:
a transistor, the transistor comprising:
a compound semiconductor stacked structure;
a pair of first electrodes that are formed separately from each other above the compound semiconductor stacked structure;
a second electrode that is formed between the first electrodes above the compound semiconductor stacked structure; and
a protective film that is formed above the compound semiconductor stacked structure and made of an insulating material containing aluminum, wherein
the protective film is in a non-contact state with the compound semiconductor stacked structure under the first electrodes.