Semiconductor device comprising a crack stop structure
A semiconductor device may include at least one pad adjacent a top surface of the device, and a metal crack stop structure below the at least one pad. The metal crack structure may have an inner envelope and an outer envelope, and may be configured to be vertically aligned with the at least one pad so that an edge of the at least one pad is between the inner and outer envelopes.
1. A semiconductor device comprising:
at least one pad exposed at a top surface of the semiconductor device; and
a metal crack stop structure below said at least one pad and having an outer edge and opening therein defining an inner edge, and vertically aligned with said at least one pad so that an edge of the at least one pad is aligned between the inner and outer edges.
2. The semiconductor device according to claim 1 , wherein said at least one pad has a circular shape; and wherein said metal crack stop structure has an annular shape.
3. The semiconductor device according to claim 2 , wherein a top of said metal crack stop structure has an inner diameter and an outer diameter that are outside a ±10° downward facing angle from the edge of the at least one pad.
4. The semiconductor device according to claim 2 , wherein said metal crack stop structure has an average diameter equal to a diameter of said at least one pad.
5. The semiconductor device according to claim 1 , further comprising a dielectric layer having a plurality of electrical connection elements therein and carrying said metal crack stop structure; and wherein said metal crack stop structure and said plurality of electrical connection elements each comprises a same material.
6. The semiconductor device according to claim 5 , wherein the material of said metal crack stop structure comprises at least one of copper and aluminum.
7. The semiconductor device according to claim 1 , wherein said metal crack stop structure comprises radial walls extending outwardly from a top surface.
8. The semiconductor device according to claim 1 , wherein said metal crack stop structure has a plurality of spaced apart openings aligned with the edge of said at least one pad.
9. The semiconductor device according to claim 1 , wherein said metal crack stop structure comprises a plurality of spaced apart sectors.
10. The semiconductor device according to claim 1 , further comprising a conductive track extending through said metal crack stop structure.
11. A semiconductor device comprising:
at least one pad adjacent a top surface of the semiconductor device; and
a crack stop structure below said at least one pad and having an outer edge and an opening therein defining an inner edge, and vertically aligned with said at least one pad so that an edge of the at least one pad is aligned between the inner and outer edges.
12. The semiconductor device according to claim 11 , wherein said at least one pad has a circular shape; and wherein said crack stop structure has an annular shape.
13. The semiconductor device according to claim 12 , wherein a top of said crack stop structure has an inner diameter and an outer diameter that are outside a ±10° downward facing angle from the edge of the at least one pad.
14. The semiconductor device according to claim 11 , further comprising a dielectric layer having a plurality of electrical connection elements therein and carrying said crack stop structure; and wherein said crack stop structure and said plurality of electrical connection elements each comprises a same material.
15. The semiconductor device according to claim 11 , wherein said crack stop structure comprises radial walls extending outwardly from a top surface.
16. The semiconductor device according to claim 11 , wherein said crack stop structure has a plurality of spaced apart openings aligned with the edge of said at least one pad.
17. A method of making a semiconductor device comprising:
positioning at least one pad adjacent a top surface of the semiconductor device; and
positioning a crack stop structure having an outer edge and an opening therein defining an inner edge to be vertically aligned below the at least one pad so that an edge of the at least one pad is aligned between the and outer edges.
18. The method according to claim 17 , wherein the at least one pad has a circular shape; and wherein the crack stop structure has an annular shape.
19. The method according to claim 18 , wherein a top of the crack stop structure has an inner diameter and an outer diameter; and wherein the crack stop structure is positioned so that the inner and outer diameters are outside a ±10° downward facing angle from the edge of the at least one pad.
20. The method according to claim 17 , wherein the crack stop structure is formed in a dielectric layer having a plurality of electrical connection elements therein; and wherein the crack stop structure and the plurality of electrical connection elements each comprises a same material.
21. The method according to claim 17 , the crack stop structure comprises radial walls extending outwardly from a top surface.
22. The method according to claim 17 , wherein positioning the crack stop structure comprises aligning a plurality of spaced apart openings of the crack stop structure with a top edge with the edge of the at least one pad.