SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the wiring layers, and the vias is electrically connected to the metal plate.
1 . A semiconductor device manufacturing method comprising:
mounting a semiconductor element on a metal plate, with a surface on which electrode terminals are arranged up;
forming a first insulating layer covering the semiconductor element on the metal plate;
forming a second via running through the first insulating layer on the metal plate;
forming a first wiring layer on the first insulating layer including the second via; and
forming a wiring board on the first insulating layer including the first wiring layer, the
wiring board including a plurality of insulating layers and wiring layers alternately stacked, the
wiring layers being connected to each other by vias.
2 . A semiconductor device manufacturing method comprising:
forming a metal post on a metal plate;
mounting a semiconductor element on a surface of the metal plate on which the metal post is arranged, with a surface on which electrode terminals are mounted up;
forming a first insulating layer covering the semiconductor element and the metal post on the metal plate;
removing part of the first insulating layer until a surface of the metal post is exposed;
forming a first wiring layer on the first insulating layer including the metal post; and
forming a wiring board on the first insulating layer including the first wiring layer, the wiring board including a plurality of insulating layers and wiring layers alternately stacked, the wiring layers being connected to each other by vias.
3 . A semiconductor device manufacturing method comprising:
mounting a semiconductor element on a metal plate, with a surface on which electrode terminals are arranged up;
connecting predetermined electrode terminal(s) of the electrode terminals and the metal plate via bonding wire(s);
forming a first insulating layer covering the semiconductor element and the bonding wire(s) on the metal plate;
forming a first wiring layer on the first insulating layer; and
forming a wiring board on the first insulating layer including the first wiring layer, the wiring board including a plurality of insulating layers and wiring layers alternately stacked, the wiring layers being connected to each other by vias.
4 . The semiconductor device manufacturing method according to claim 1 , comprising:
forming first vias running through the first insulating layer on the electrode terminals between said forming the first insulating layer and said forming the first wiring layer,
wherein, in said forming the first wiring layer, a first wiring layer is formed on the first insulating layer including the first vias.
5 . The semiconductor device manufacturing method according to claim 1 ,
wherein, in said mounting the semiconductor element, the semiconductor element having the electrode terminals on which second metal posts are arranged is mounted,
wherein the semiconductor device manufacturing method comprises said removing part of the first insulating layer until a surface of each of the second metal posts is exposed between said forming the first insulating layer and said forming the first wiring layer, and
wherein, in said forming the first wiring layer, a first wiring layer is formed on the first insulating layer including the second metal posts.
6 . The semiconductor device manufacturing method according to claim 1 ,
wherein, in said forming the first insulating layer, the electrode-terminal-side surface and the side end surfaces of the semiconductor element are covered with insulating material by stacking the insulating material at once.
7 . The semiconductor device manufacturing method according to claim 1 ,
wherein, in said forming the first insulating layer, after the electrode-terminal-side surface of the semiconductor element is covered with a first insulating material, the side end surface of the semiconductor element is covered with a second insulating material different from the first insulating material.