Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film

1. A resist pattern-forming method comprising:

providing a resist film having a surface free energy of 30 to 40 mN/m is on a substrate using a radiation-sensitive resin composition;

exposing the resist film by applying radiation through a mask; and

developing the exposed resist film,

wherein the radiation-sensitive resin composition comprises:

a fluorine atom-containing polymer which comprises a first structural unit that comprises an alkali-labile group, the alkali-labile group being a group that substitutes a hydrogen atom of a polar functional group, and that dissociates in a presence of an alkali such that the polar functional group is generated;

a base polymer that comprises an acid-labile group, and that has a fluorine atom content lower than a fluorine atom content of the fluorine atom-containing polymer;

an acid generator; and

an acid diffusion controller.

2. The resist pattern-forming method according to claim 1 , wherein the exposing of the resist film comprises exposing the resist film through an immersion liquid that is provided over the resist film.

3. The resist pattern-forming method according to claim 1 , wherein the fluorine atom-containing polymer comprises a second structural unit that comprises an acid-labile group.

4. The resist pattern-forming method according to claim 3 , wherein the fluorine atom-containing polymer comprises a third structural unit that does not include an alkali-labile group, but comprises a fluorine atom.

5. The resist pattern-forming method according to claim 1 , wherein the fluorine atom-containing polymer comprises a third structural unit that does not include an alkali-labile group, but comprises a fluorine atom.

6. The resist pattern-forming method according to claim 1 , wherein the radiation-sensitive resin composition further comprises a solvent which comprises a polyhydric alcohol partial ether-based solvent, a ketone solvent, or both thereof.

7. The resist pattern-forming method according to claim 6 , wherein the radiation-sensitive resin composition further comprises an uneven distribution promoter which has a relative dielectric constant of 30 to 200 and a boiling point at 1 atmosphere of 100° C. or more.

8. The resist pattern-forming method according to claim 7 , wherein the uneven distribution promoter is γ-butyrolactone, valerolactone, mevalonic lactone, norbornanelactone, propylene carbonate, ethylene carbonate, butylene carbonate, vinylene carbonate, succinonitril, glycerol, or combinations thereof.

9. The resist pattern-forming method according to claim 1 , wherein the radiation-sensitive resin composition further comprises an uneven distribution promoter which has a relative dielectric constant of 30 to 200 and a boiling point at 1 atmosphere of 100° C. or more.

10. The resist pattern-forming method according to claim 9 , wherein the uneven distribution promoter is γ-butyrolactone, valerolactone, mevalonic lactone, norbornanelactone, propylene carbonate, ethylene carbonate, butylene carbonate, vinylene carbonate, succinonitril, glycerol, or combinations thereof.

11. A resist pattern-forming radiation-sensitive resin composition comprising:

a fluorine atom-containing polymer which comprises a first structural unit that comprises an alkali-labile group, the alkali-labile group being a group that substitutes a hydrogen atom of a polar functional group, and that dissociates in a presence of an alkali such that the polar functional group is generated;

a base polymer that comprises an acid-labile group, and that has a fluorine atom content lower than a fluorine atom content of the fluorine atom-containing polymer;

an acid generator; and

an acid diffusion controller,

the resist pattern-forming radiation-sensitive resin composition being capable of forming a resist film having a surface free energy of 30 to 40 mN/m.

12. The resist pattern-forming radiation-sensitive resin composition according to claim 11 , wherein the fluorine atom-containing polymer comprises a second structural unit that comprises an acid-labile group.

13. The resist pattern-forming radiation-sensitive resin composition according to claim 12 , wherein the fluorine atom-containing polymer comprises a third structural unit that does not include an alkali-labile group, but comprises a fluorine atom.

14. The resist pattern-forming radiation-sensitive resin composition according to claim 11 , wherein the fluorine atom-containing polymer comprises a third structural unit that does not include an alkali-labile group, but comprises a fluorine atom.

15. A laminate comprising:

a substrate; and

a resist film having a surface free energy of 30 to 40 mN/m and provided on the substrate, the resist film comprising:

a fluorine atom-containing polymer which comprises a first structural unit that comprises an alkali-labile group, the alkali-labile group being a group that substitutes a hydrogen atom of a polar functional group, and that dissociates in a presence of an alkali such that the polar functional group is generated;

a base polymer that comprises an acid-labile group, and that has a fluorine atom content lower than a fluorine atom content of the fluorine atom-containing polymer;

an acid generator; and

an acid diffusion controller.

16. The laminate according to claim 15 , wherein the fluorine atom-containing polymer comprises a second structural unit that comprises an acid-labile group.

17. The laminate according to claim 16 , wherein the fluorine atom-containing polymer comprises a third structural unit that does not include an alkali-labile group, but comprises a fluorine atom.

18. The laminate according to claim 15 , wherein the fluorine atom-containing polymer comprises a third structural unit that does not include an alkali-labile group, but comprises a fluorine atom.