Contact structure and forming method
A method for forming a contact structure includes forming a stack of alternating active layers and insulating layers. The stack includes first and second sub stacks each with active layers separated by insulating layers. The active layers of each sub stack include an upper boundary active layer. A sub stack insulating layer is formed between the first and second sub stacks with an etching time different from the etching times of the insulating layers for a given etching process. The upper boundary active layers are accessed, after which the remainder of the active layers are accessed to create a stairstep structure of landing areas on the active layers. Interlayer conductors are formed to extend to the landing areas, the interlayer conductors separated from one another by insulating material.
1. A stairstep contact structure comprising:
a stack of alternating active layers and insulating layers having non-simple periods;
a stairstep structure of landing areas on the active layers; and
interlayer conductors extending to the landing areas, the interlayer conductors separated from one another by insulating material.
2. The stairstep contact structure according to claim 1 , wherein the stack of alternating active layers and insulating layers comprises:
a first sub stack comprising N active layers separated by insulating layers, the N active layers comprising an upper boundary active layer;
a second sub stack over the first sub stack, the second sub stack comprising M active layers separated by insulating layers, the M active layers comprising an upper boundary active layer; and
a first sub stack insulating layer between the first and second sub stacks, the first sub stack insulating layer having an etching time different from the etching times of the insulating layers of the second sub stack for a given etching process.
3. The stairstep contact structure according to claim 2 , wherein the stack comprises:
third and fourth sub stacks;
a second sub stack insulating layer between the second and third sub stacks;
a third sub stack insulating layer between the third and fourth sub stacks; and wherein:
the insulating layers of the first, second, third and fourth sub stacks have substantially equal thicknesses and are made of a first insulating material;
the first, second and third sub stack insulating layers are made of a second, third and fourth insulating materials; and
at least two of the first, second, third and fourth insulating materials are of different insulating materials having different etching characteristics.
4. The stairstep contact structure according to claim 3 , wherein:
the insulating layers of each of the first, second, third and fourth sub stacks have substantially equal etching times for a given etch process; and
each of the first, second and third sub stack insulating layers having an etching time different from the etching times of the insulating layers of the first, second, third and fourth sub stacks for the given etch process.
5. The stairstep contact structure according to claim 4 , where the etching times for the first and third sub stack insulating layers are substantially equal for the given etch process.
6. The stairstep contact structure according to claim 1 , wherein for the same etch process at least one of (1) the active layers have different etch times, or (2) the insulating layers have different etch times.