Methods for cell phasing and placement in dynamic array architecture and implementation of the same
View Patent ↗A semiconductor chip is defined to include a logic block area having a first chip level in which layout features are placed according to a first virtual grate, and a second chip level in which layout features are placed according to a second virtual grate. A rational spatial relationship exists between the first and second virtual grates. A number of cells are placed within the logic block area. Each of the number of cells is defined according to an appropriate one of a number of cell phases. The appropriate one of the number of cell phases causes layout features in the first and second chip levels of a given placed cell to be aligned with the first and second virtual grates as positioned within the given placed cell.
1. An integrated circuit, comprising:
a first cell; and
a second cell positioned next to the first cell such that a leftmost boundary of the second cell is coincident with a rightmost boundary of the first cell,
the first cell including a first number of linear shaped conductive structures formed to extend in a parallel manner in a first direction in a first chip level,
the second cell including a second number of linear shaped conductive structures formed to extend in the parallel manner in the first direction in the first chip level,
a leftmost one of the first number of linear shaped conductive structures in the first cell positioned a first distance from a leftmost boundary of the first cell,
a leftmost one of the second number of linear shaped conductive structures in the second cell positioned a second distance from a leftmost boundary of the second cell,
the second distance different than the first distance, and
the first and second numbers of linear shaped conductive structures having an uninterrupted uniformity in centerline-to-centerline spacing as measured in a second direction perpendicular to the first direction between lengthwise centerlines of adjacent ones of the first and second numbers of linear shaped conductive structures, from left to right across an entirety of both the first and second cells.
2. An integrated circuit as recited in claim 1 , wherein the first chip level is a gate electrode level.
3. An integrated circuit as recited in claim 1 , wherein some of the first and second numbers of linear shaped conductive structures respectively form one or more transistor gate electrodes.
4. An integrated circuit as recited in claim 1 , wherein some of the first and second numbers of linear shaped conductive structures do not form any transistor gate electrode.
5. An integrated circuit as recited in claim 1 , wherein some of the first and second numbers of linear shaped conductive structures are electrically separated from any other conductive structure within the circuit.
6. An integrated circuit as recited in claim 1 , wherein a width of the first cell as measured in the second direction is an integer multiple a centerline-to-centerline spacing as measured in the second direction between lengthwise centerlines of any two adjacent ones of the first and second numbers of linear shaped conductive structures, and
wherein a width of the second cell as measured in the second direction is an integer multiple the centerline-to-centerline spacing as measured in the second direction between lengthwise centerlines of any two adjacent ones of the first and second numbers of linear shaped conductive structures.
7. An integrated circuit as recited in claim 1 , wherein at least one of the first number of linear shaped conductive structures has its lengthwise centerline substantially centered on a boundary of the first cell.
8. An integrated circuit as recited in claim 7 , wherein at least one of the second number of linear shaped conductive structures has its lengthwise centerline substantially centered on a boundary of the second cell.
9. An integrated circuit as recited in claim 1 , wherein the first cell includes a third number of linear shaped conductive structures formed to extend in the parallel manner in the first direction in a second chip level different from the first chip level,
the second cell including a fourth number of linear shaped conductive structures formed to extend in the parallel manner in the first direction in the second chip level,
a leftmost one of the third number of linear shaped conductive structures in the first cell positioned a third distance from the leftmost boundary of the first cell,
a leftmost one of the fourth number of linear shaped conductive structures in the second cell positioned a fourth distance from the leftmost boundary of the second cell,
the fourth distance different than the third distance, and
the third and fourth numbers of linear shaped conductive structures having an uninterrupted uniformity in centerline-to-centerline spacing as measured in the second direction perpendicular to the first direction between lengthwise centerlines of adjacent ones of the third and fourth numbers of linear shaped conductive structures, from left to right across an entirety of both the first and second cells.
10. An integrated circuit as recited in claim 9 , wherein the centerline-to-centerline spacing as measured in the second direction perpendicular to the first direction between lengthwise centerlines of adjacent ones of the first and second numbers of linear shaped conductive structures is a first pitch, and
wherein the centerline-to-centerline spacing as measured in the second direction perpendicular to the first direction between lengthwise centerlines of adjacent ones of the third and fourth numbers of linear shaped conductive structures is a second pitch, and
wherein the first and second pitches vertically align with each other in a periodic manner.
11. An integrated circuit as recited in claim 10 , wherein a ratio of the second pitch to the first pitch is 4 to 3.
12. An integrated circuit as recited in claim 11 , wherein the first chip level is a gate level of the chip and the second chip level is a second interconnect level of the chip.
13. An integrated circuit as recited in claim 10 , wherein a ratio of the second pitch to the first pitch is 3 to 2.
14. An integrated circuit as recited in claim 13 , wherein the first chip level is a gate level of the chip and the second chip level is a second interconnect level of the chip.
15. An integrated circuit as recited in claim 10 , wherein a ratio of the second pitch to the first pitch is 1 to 1.
16. An integrated circuit as recited in claim 15 , wherein the first chip level is a gate level of the chip and the second chip level is a second interconnect level of the chip.
17. A method for defining a layout of an integrated circuit, comprising:
defining, using a computer, a layout of a first cell;
defining, using the computer, a layout of a second cell; and
positioning, using the computer, the layout of the second cell next to the layout of the first cell such that a leftmost boundary of the second cell is coincident with a rightmost boundary of the first cell,
the layout of the first cell defined to include a first number of linear shaped conductive structure layout shapes formed to extend in a parallel manner in a first direction in a first chip level,
the layout of the second cell defined to include a second number of linear shaped conductive structure layout shapes formed to extend in the parallel manner in the first direction in the first chip level,
a leftmost one of the first number of linear shaped conductive structure layout shapes in the first cell positioned a first distance from a leftmost boundary of the first cell,
a leftmost one of the second number of linear shaped conductive structure layout shapes in the second cell positioned a second distance from a leftmost boundary of the second cell,
the second distance different than the first distance, and
the first and second numbers of linear shaped conductive structure layout shapes having an uninterrupted uniformity in centerline-to-centerline spacing as measured in a second direction perpendicular to the first direction between lengthwise centerlines of adjacent ones of the first and second numbers of linear shaped conductive structure layout shapes, from left to right across an entirety of both the first and second cells.