RRAM cell structure with laterally offset BEVA/TEVA

1. A resistive random access memory (RRAM) device comprising:

a variable resistive dielectric layer;

a top electrode disposed over the variable resistive dielectric layer and having a recess thereon;

a top electrode via (TEVA) arranged within an inter-layer dielectric (ILD) layer and abutting the to electrode at a first location; and

an insulating anti-reflective layer disposed within the recess and abutting the top electrode at a second location, wherein the first and second locations are laterally offset from one another.

2. The RRAM device of claim 1 , further comprising:

a bottom electrode disposed below the variable resistive dielectric layer;

and

a bottom electrode via (BEVA) that abuts the bottom electrode.

3. The RRAM device of claim 2 further comprising:

a semiconductor area comprising a metal disposed within an extremely low-k dielectric layer formed thereover;

a dielectric protection layer having an open region above the metal, wherein sidewalls of dielectric protection layer end with rounded ends above the metal;

and,

spacers located on opposing sides of the top electrode.

4. The RRAM device of claim 3 , wherein:

the BEVA resides over a defined region above the dielectric protection layer, follows a shape of the rounded ends of the dielectric protection layer in a dipping fashion and resides over the open region contacting the metal in the semiconductor area;

the bottom electrode is disposed entirely over the BEVA;

the variable resistive dielectric layer is disposed entirely over the BE bottom electrode;

the top electrode resides over a defined region above the variable resistive dielectric layer; and

the TEVA resides at a location that is laterally offset from the open region.

5. The RRAM device of claim 2 , further comprising a length dimension and a breadth dimension constituting an area, and wherein the TEVA and the BEVA are disposed within the area.

6. The RRAM device of claim 1 , where in a shape of the RRAM device is rectangular.

7. The RRAM device of claim 4 , wherein the top electrode comprises Tantalum Nitride (TaN) over Titanium (Ti), the bottom electrode comprises titanium nitride (TiN), the TEVA comprises copper (Cu), the BEVA comprises TaN, the variable resistive dielectric layer comprises Hafnium oxide (HfO), the spacer comprises silicon nitride (SiN) and the insulating anti-reflective layer comprises silicon ox nitride (SiON).

8. A resistive random access memory (RRAM) device, comprising:

a semiconductor body having a source region and a drain region horizontally separated by a channel region;

a gate structure disposed over the channel region;

a first contact and a second contact extending upwardly from the drain and source regions, respectively;

a dielectric protection layer having an opening disposed above the first contact;

a bottom electrode via (BEVA) disposed over the first contact and electrically coupled to the first contact, wherein the BEVA abuts the first contact at a first location through the opening;

a RRAM cell formed over the BEVA and having a first surface and a second surface, wherein the first surface is coupled to the BEVA and the second surface has a recess positioned vertically above the first location; and

a top electrode via (TEVA) disposed over the RRAM cell and abutting the second surface at a second location, wherein the first and second locations are laterally offset with respect to one another.

9. The RRAM device of claim 8 further comprising, an insulating anti-reflective layer disposed within the recess on the second surface.

10. The RRAM device of claim 8 , wherein the BEVA resides above the dielectric protection layer and follows a shape of rounded ends of the dielectric protection layer in a dipping fashion, to abut the first contact.

11. The RRAM device of claim 8 , wherein the gate structure is coupled to a word line.

12. The RRAM device of claim 8 , wherein the gate structure comprises a poly-silicon gate electrode formed over a gate dielectric which electrically isolates the gate electrode from the channel region.

13. The RRAM device of claim 8 , wherein one or more metal contacts and one or more metal contact vias exist between the source region and the second contact and between the drain region and the first contact.

14. The RRAM device of claim 8 , wherein the source region is coupled to a source line and the drain region is coupled to a bit line.

15. The RRAM device of claim 8 , wherein the source and drain regions have a first conductivity and the semiconductor body has a second conductivity.

16. A resistive random access memory (RRAM) cell of a memory device, comprising:

a variable resistive dielectric layer having a top surface and a bottom surface;

a top electrode (TE) disposed over the top surface of the variable resistive dielectric layer;

a bottom electrode (BE) disposed below the bottom surface of the variable resistive dielectric layer;

a top electrode via (TEVA) that abuts the top electrode, wherein the TEVA is centered at a first location;

a bottom electrode via (BEVA) that abuts the bottom electrode wherein the BEVA is centered at a second location which is laterally offset from the first location;

a semiconductor body having a source region and a drain region horizontally separated by a channel region;

a gate structure disposed over the channel region and connected to a word line;

a first overlying contact coupled to the source region and connected to a source line; and

a second overlying contact disposed above the TEVA, coupled to the drain region through the RRAM cell, and connected to a bit line.

17. The memory device of claim 16 , further comprising:

a semiconductor area comprising a metal disposed within an extreme low-k dielectric layer formed thereover;

a dielectric protection layer having an open region above the metal, wherein sidewalls of dielectric protection layer end with rounded ends above the metal;

an insulating anti-reflective layer abutting the top electrode above the open region; and

spacers located on opposing sides of the top electrode.

18. The memory device of claim 17 , wherein:

the bottom electrode via (BEVA) resides over a defined region above the dielectric protection layer, follows a shape of the rounded ends of the dielectric protection layer in a dipping fashion and resides over the open region contacting the metal in the semiconductor area;

the bottom electrode is disposed entirely over the BEVA;

the variable resistive dielectric layer is disposed entirely over the BE; and

the top electrode resides over a defined region above the variable resistive dielectric layer.

19. The memory device of claim 17 , wherein the first location of the TEVA is laterally offset from the open region and the insulating anti-reflective layer.

20. The memory device of claim 16 , wherein the RRAM cell comprises a length dimension and a breadth dimension constituting an area, and wherein the TEVA and the BEVA are disposed within the area.