Stabilized thallium bromide radiation detectors and methods of making the same

1. A crystal, comprising:

thallium bromide (TlBr);

one or more positively charged dopants; and

one or more negatively charged dopants,

wherein a concentration of the one or more positively charged dopants is about equal to a concentration of the one or more negatively charged dopants.

2. The crystal as recited in claim 1 , wherein the one or more positively charged dopants comprise lead (Pb).

3. The crystal as recited in claim 1 , wherein the one or more negatively charged dopants are selected from a group consisting of: selenium, sulfur, and a combination thereof.

4. The crystal as recited in claim 1 , wherein the concentration of the one or more positively charged dopants in the crystal is between about 10 15 /cm 3 to about 10 18 /cm 3 .

5. The crystal as recited in claim 1 , wherein the concentration of the one or more charged dopants in the crystal is between about 10 15 /cm 3 to about 10 18 /cm 3 .

6. The crystal as recited in claim 1 , wherein each positively charged dopant is coupled to a thallium vacancy in the crystal, and each negatively charged dopant is coupled to a bromide vacancy in the crystal.

7. The crystal as recited in claim 6 , wherein a positively charged dopant-thallium vacancy pair and a negatively charged dopant-bromide vacancy pair are coupled to form a four-defect cluster consisting of the thallium vacancy, the positively charged dopant, the bromide vacancy, and the negatively charged dopant.

8. The crystal as recited in claim 1 , wherein at least one of the one or more negatively charged dopants is tellurium.

9. A system, comprising:

a monolithic crystal comprising:

thallium bromide (TlBr),

a plurality of positively charged dopants, each positively charged dopant being coupled to a thallium vacancy in the monolithic crystal thereby forming a positively charged dopant-thallium vacancy pair, and

a plurality of negatively charged dopants, each negatively charged dopant being coupled to a bromide vacancy in the monolithic crystal thereby forming a negatively charged dopant-bromide vacancy pair,

wherein a total concentration of the plurality of positively charged dopants is about equal to a total concentration of the plurality of negatively charged dopants; and

a detector, wherein the detector is configured to detect a signal response of the crystal.

10. The system as recited in claim 9 , wherein at least one of the one or more positively charged dopants consist of lead (Pb).

11. The system as recited in claim 9 , wherein at least one of the negatively charged dopants is selenium and at least one of the negatively charged dopants is sulfur.

12. The system as recited in claim 9 , wherein the total concentration of the one or more positively charged dopants in the crystal is between about 10 15 /cm 3 to about 10 18 /cm 3 .

13. The system as recited in claim 9 , wherein the

crystal has a volume of at least about 1 cm 3 ,

wherein one of the positively charged dopant-thallium vacancy pairs and one of the negatively charged dopant-bromide vacancy pairs are coupled to form a four-defect cluster consisting of the thallium vacancy, the positively charged dopant, the bromide vacancy, and the negatively charged dopant.

14. The system as recited in claim 9 , wherein at least one of the negatively charged dopants is tellurium.

15. The system as recited in claim 9 , wherein the crystal maintains an energy resolution of less than about 1% at 662 keV for about several months.

16. The system as recited in claim 9 , further comprising:

a first electrode coupled to a first region of the monolithic crystal; and

a second electrode coupled to a second region of the monolithic crystal.

17. A method, comprising:

forming a monolithic crystal comprising:

thallium bromide;

one or more positively charged dopants; and

one or more negatively charged dopants,

wherein forming the crystal comprises:

providing a growing environment in which to grow the monolithic crystal;

growing the monolithic crystal in the growing environment; and

adding equal amounts of the positively charged dopants and the negatively charged dopants to the growing environment to incorporate the positively and negatively charged dopants into the monolithic crystal.

18. The method as recited in claim 17 ,

wherein a concentration of the one or more positively charged dopants in the monolithic crystal is between about 10 15 /cm 3 to about 10 18 /cm 3 , and wherein a concentration of the one or more negatively charged dopants in the monolithic crystal is between about 10 15 /cm 3 to about 10 18 /cm 3 .

19. The method as recited in claim 17 , wherein the monolithic crystal is grown via a process selected from a group consisting of: a Czochralski process, a Stockbarger process, and a zone refining process.

20. The method as recited in claim 17 , wherein incorporating the one or more positively charged dopants and the one or more negatively charged dopants into the monolithic crystal does not introduce deep levels in a band gap of the monolithic crystal.