Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof
In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.
1. A method for operating an electronic device, said method comprising:
a) providing an electronic device comprising:
a first electrical contact and second electrical contact, wherein the first electrical contact and the second electrical contact are arranged so as to define a gap region therebetween,
a substrate, wherein at least the first electrical contact is deposed on the substrate, and
a switching layer comprising a silicon oxide residing in the gap region;
b) applying an activating voltage to the electronic device to convert the silicon oxide into a switchably conductive state, wherein the activating voltage comprises an electroforming process;
c) applying a first programming voltage to the electronic device to set the electronic device to a first conductivity state, wherein the first conductivity state is selected from the group consisting of an ON state and an OFF state; and
d) applying a reading voltage to the electronic device and reading the current flowing through the electronic device, wherein the reading voltage is less than the first programming voltage, and wherein the reading voltage does not affect the first conductivity state.
2. The method of claim 1 , wherein the switching layer comprises at least one vertical edge extending between the first electrical contact and the second electrical contact, wherein a switchably conductive pathway forms at the at least one vertical edge.
3. The method of claim 1 , wherein the activating voltage forms a silicon nanocrystal switchably conductive pathway in the silicon oxide between the first electrical contact and the second electrical contact.
4. The method of claim 1 , further comprising:
e) applying a second programming voltage to the electronic device to set the electronic device into a second conductivity state, wherein the second conductivity state is selected from the group consisting of an ON state and an OFF state, wherein the second programming voltage is larger in magnitude than the first programming voltage when the second conductivity state is an OFF state, and wherein the second programming voltage is smaller in magnitude than the first programming voltage when the second conductivity state is an ON state.
5. The method of claim 4 , further comprising:
f) applying the reading voltage to the electronic device and reading the current flowing through the electronic device, wherein the reading voltage does not affect the second conductivity state.
6. The method of claim 4 , wherein the first programming voltage and the second programming voltage have different magnitudes and are of the same polarity or the opposite polarity.
7. The method of claim 1 , wherein the activating voltage to convert the silicon oxide into a switchably conductive state is applied in a manner selected from the group consisting of at least one continuous voltage sweep and at least one voltage pulse.
8. A method for making a vertically oriented two-terminal electronic device, said method comprising:
providing a first conductive layer comprising a first electrical conductor;
depositing a switching layer on the first conductive layer, wherein the switching layer comprises a switchably conductive silicon oxide;
depositing a second conductive layer on the switching layer; and
etching the second conductive layer and the switching layer to define at least one vertical edge in the switching layer, wherein the at least one vertical edge extends between the first conductive layer and the second conductive layer.
9. The method of claim 8 , wherein the etching takes place by a technique selected from the group consisting of wet etching and dry etching.
10. The method of claim 8 , wherein the switchably conductive silicon oxide is deposited by a technique selected from the group consisting of sputtering, thermal deposition, chemical vapor deposition, and combinations thereof.
11. The method of claim 8 , wherein a conductive film is bound to the at least one vertical edge in the switching layer.
12. The method of claim 11 , wherein the conductive film is discontinuous to provide at least one gap between the first conductive layer and the second conductive layer.
13. The method of claim 8 , wherein the switching layer further comprises a dielectric film.
14. The method of claim 8 , wherein the switchably conductive silicon oxide comprises SiO x pillars.