Charge drain coating for electron-optical MEMS
A system and method associated with a charge drain coating are disclosed. The charge drain coating may be applied to surfaces of an electron-optical device to drain electrons that come into contact with the charge drain coating so that the performance of the electron-optical device will not be hindered by electron charge build-up. The charge drain coating may include a doping material that coalesces into clusters that are embedded within a high dielectric insulating material. The charge drain coating may be deposited onto the inner surfaces of lenslets of the electron-optical device.
1. A micro-electromechanical systems (MEMS) device to receive an electron beam in an electron-beam lithography chamber, the MEMS device comprising:
a plurality of lenslets to receive electrons from the electron beam, each of the lenslets are configured to either transmit or not to transmit, or to reflect or not to reflect, at least some of the electrons from the electron beam; and
a charge drain coating on at least some of the inner surfaces of each of the lenslets to drain any of the electrons that have become embedded into the charge drain coating, the charge drain coating includes insulating material and at least one doping material embedded within the insulating material, the doping material includes at least one nanocluster.
2. The MEMS device of claim 1 , wherein the inner surfaces includes the sidewalls of the lenslets.
3. The MEMS device of claim 1 , wherein the MEMS device is used for reflective electron beam lithography (REBL).
4. The MEMS device of claim 1 , wherein the MEMS device is a digital pattern generator (DPG) with an array of the lenslets.
5. The MEMS device of claim 4 , wherein each of the lenslets are holes in a substrate of the MEMS device, each of the lenslets are selectively configured to transmit or not to transmit, or to reflect or not to reflect, at least some of the electrons.
6. The MEMS device of claim 1 , wherein the charge drain coating includes a plurality of layers of the insulating material and a plurality of layers of the doping material, the doping layers include clusters of the doping material.
7. The MEMS device of claim 1 , wherein the insulating material is at least one of aluminum oxide (Al 2 O 3 ) and silicon oxide (SiO 2 ) and the doping material is a metal or a metal oxide, carbide, nitride, or elemental form of at least one of molybdenum (Mo), tungsten (W), titanium (Ti), hafnium (Hf), tantalum (Ta), niobium (Nb), platinum (Pt), palladium (Pd), ruthenium (Ru), or iridium (Ir).
8. A system comprising:
an electron beam emitter configured to produce an electron beam; and
a digital pattern generator (DPG) to be illuminated by the electron beam from the electron beam emitter, the DPG comprising:
a plurality of lenslets to receive electrons from the electron beam and to either absorb or reflect at least some of the electrons from the electron beam; and
a coating on the sidewalls of each of the lenslets to drain any of the electrons that come into contact with the coating, the coating includes insulating material and at least one doping material embedded within the insulating material, the doping material includes at least one nanocluster.
9. The system of claim 8 , wherein the doping material includes at least one cluster of doping material that is a metal or a metal oxide, carbide, nitride, or elemental form of at least one of molybdenum (Mo), tungsten (W), titanium (Ti), hafnium (Hf), tantalum (Ta), niobium (Nb), platinum (Pt), palladium (Pd), ruthenium (Ru), or iridium (Ir).
10. The system of claim 8 , wherein the system is used for reflective electron beam lithography (REBL).
11. The system of claim 8 , wherein each of the lenslets are holes in the DPG, each of the lenslets are selectively configured to either absorb or reflect at least some of the electrons.
12. The system of claim 8 , wherein the insulating material has a high dielectric strength and the doping material is an oxide, carbide, nitride, or elemental form of a metal.
13. The system of claim 8 , wherein the insulating material is composed of aluminum oxide and the doping material is composed of molybdenum suboxide (MoO 3-x ) material, where 0<x≦1.
14. The system of claim 8 , wherein the insulating material has a high dielectric strength.