Method for packaging circuits
A method for packaging integrated circuit chips (die) is described that includes providing a base substrate with package level contacts, coating a base substrate with adhesive, placing dies on the adhesive, electrically connecting the die to the package level contacts, and removing the backside of the base substrate to expose the backside of the package level contacts. Accordingly, an essentially true chip scale package is formed. Multi-chip modules are formed by filling gaps between the chips with an encapsulant. In an embodiment, chips are interconnected by electrical connections between package level contacts in the base substrate. In an embodiment, substrates each having chips are adhered back-to-back with through vias formed in aligned saw streets to interconnect the back-to-back chip assembly.
1. A chip-scale-packaging method, comprising:
singulating a die from a first wafer;
testing the singulated die;
forming final I/O locations on a second wafer;
applying adhesive to a top surface of the second wafer;
placing the singulated die on the adhesive over the final I/O locations;
removing a back surface of the second wafer to expose the final I/O locations; and
connecting the singulated die to an electric circuit through the final I/O location,
wherein singulating the die from the first wafer includes mechanically cutting saw streets to form a side of the first and second wafers, and wherein singulating the die includes exposing at least one electrical connection along the side of the first and second wafers.
2. The chip-scale-packaging method of claim 1 , wherein removing the back surface of the second wafer includes backgrinding the second wafer.
3. The chip-scale-packaging method of claim 1 , wherein removing the back surface of the second wafer includes etching the back surface of the second wafer.
4. The chip-scale-packaging method of claim 1 , wherein removing the back surface of the second wafer includes separating the singulated die and a portion of the second wafer from a remainder of the second wafer.
5. The method of claim 1 , wherein removing the back surface of the second wafer includes backgrinding the second wafer.
6. The method of claim 1 , wherein removing the back surface of the second wafer includes etching the back surface of the second wafer.
7. A chip-scale-packaging method, comprising:
singulating a die from a first wafer;
testing the singulated die;
forming final I/O locations on a second wafer;
applying adhesive to a top surface of the second wafer;
placing the singulated die on the adhesive over the final I/O locations;
removing a back surface of the second wafer to expose the final I/O locations; and
connecting the singulated die to an electric circuit through the final I/O location,
wherein singulating the die includes exposing at least one electrical connection along a side of the first and second wafers.