Light emitting diode with a current concentrating structure
A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.
1. A light-emitting diode (LED) comprising:
a transparent insulating layer; and
at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer,
wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.
2. The LED of claim 1 , wherein the at least one transparent conductive oxide layer comprises:
a first transparent conductive oxide layer; and
a second transparent conductive oxide layer,
wherein the transparent insulating layer is substantially sandwiched between the first and second transparent conductive oxide layers.
3. The LED of claim 2 , wherein the transparent insulating layer has an inward recess relative to the first transparent conductive oxide layer of about 1˜50 microns.
4. The LED of claim 3 , wherein the inward recess is about 20 microns or less.
5. The LED of claim 3 , wherein the first and second transparent oxide layers are electrically coupled at the peripheral region of the LED corresponding to the inward recess.
6. The LED of claim 3 , further comprising:
a sapphire substrate;
a light-emitting epitaxy layer disposed over the sapphire substrate and comprising an n-type GaN-based epitaxial layer, an active layer, and a p-type GaN-based epitaxial layer;
a p-electrode formed over the second transparent conductive oxide layer; and
an n-electrode formed over the n-type GaN-based epitaxial layer,
wherein the first transparent conductive oxide layer is over the p-type GaN-based epitaxial layer, and
wherein the second transparent conductive oxide layer substantially encloses a side surface of the transparent insulating layer.
7. The LED of claim 6 , wherein the first transparent conductive oxide layer comprises at least one material selected from indium oxide, tin oxide, indium tin oxide, zinc oxide.
8. The LED of claim 6 , wherein the transparent insulating layer comprises at least one material selected from silicon oxide, titanium oxide, silicon nitride, aluminum oxide, magnesium fluoride, SOG, Polymer.
9. The LED of claim 8 , wherein the transparent insulation layer comprises silicon nitride.
10. The LED of claim 6 , wherein the second transparent conductive oxide layer comprises at least one material selected from indium oxide, tin oxide, indium tin oxide, zinc oxide.
11. The LED of claim 6 , wherein the p-electrode is disposed in a central local area of the second transparent conductive oxide layer.
12. A method of manufacturing a light-emitting diode (LED), the method comprising:
providing a transparent insulating layer; and
substantially enclosing the transparent insulating layer with at least one transparent conductive oxide layer,
wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.
13. The method of claim 12 , wherein said enclosing comprises:
forming a first transparent conductive oxide layer; and
forming a second transparent conductive oxide layer,
wherein the transparent insulating layer is substantially sandwiched between the first and second transparent conductive oxide layers.
14. The method claim 12 , wherein the transparent insulating layer has an inward recess relative to the first transparent conductive oxide layer of about 1˜50 microns.
15. The method of claim 14 , wherein the inward recess is about 20 microns or less.
16. The method of claim 15 , further comprising forming an electrical connection between the first and second transparent oxide layers at the peripheral region of the LED corresponding to the inward recess.
17. The method of claim 16 , further comprising:
providing a sapphire substrate;
forming a light-emitting epitaxy layer over the sapphire substrate including an n-type GaN-based epitaxial layer, an active layer, and a p-type GaN-based epitaxial layer;
forming a p-electrode over the second transparent conductive oxide layer; and
forming an n-electrode over the n-type GaN-based epitaxial layer,
wherein the first transparent conductive oxide layer is formed over the p-type GaN-based epitaxial layer, and
wherein the second transparent conductive oxide layer substantially encloses a side surface of the transparent insulating layer.
18. A display, signage, or lighting system comprising a plurality of light-emitting diodes (LEDs), wherein each LED comprises:
a transparent insulating layer; and
at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer,
wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.
19. The system of claim 18 , wherein the at least one transparent conductive oxide layer comprises:
a first transparent conductive oxide layer; and
a second transparent conductive oxide layer,
wherein the transparent insulating layer is substantially sandwiched between the first and second transparent conductive oxide layers.
20. The system of claim 19 , wherein the transparent insulating layer has an inward recess relative to the first transparent conductive oxide layer of about 1˜50 microns.