Single-mode quantum cascade lasers with enhanced tuning range
In one aspect, semiconductor lasers are provided. A semiconductor laser described herein comprises substrate and a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm.
1. A single-mode laser comprising:
a substrate; and
a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm operable for expanding a single-mode emission tuning range of the single-mode laser, wherein the expanded single-mode emission tuning range covers 20 cm −1 .
2. The single-mode laser of claim 1 , wherein the temperature control architecture of the second arm comprises one or more electrical contacts for biasing the second arm independent of biasing the first arm.
3. The single-mode laser of claim 1 , wherein the single-mode laser is a quantum cascade laser.
4. The single-mode laser of claim 1 , wherein the second arm is longer than the first arm.
5. The single-mode laser of claim 1 , wherein the second arm is longer than the first arm by at least 300 μm.
6. The single-mode laser of claim 1 , wherein the second arm is longer than the first arm by 300 μm to 500 μm.
7. The single-mode laser of claim 1 , wherein light is generated in the cavity and emitted at a straight waveguide segment end.
8. The single-mode laser of claim 1 , wherein single-mode tuning is substantially continuous over the range of 20 cm −1 .
9. The single mode laser of claim 1 , wherein the epitaxial semiconducting layers comprise alternating layers of III/V semiconductor material.
10. The single mode laser of claim 1 , wherein the alternating layers comprise indium gallium arsenide and indium aluminum arsenide.
11. The single mode laser of claim 1 , wherein locally symmetric Y-splitter structures join the straight waveguide segments to the AMZ interferometer structure.
12. A method of tuning laser emission comprising:
providing a single-mode semiconductor laser including a substrate and a cavity formed on the substrate, the cavity comprising an asymmetric Mach-Zehnder (AMZ) interferometer structure positioned between two straight waveguide segments, the straight waveguide segments and first and second arms of the AMZ interferometer structure comprising epitaxial semiconductor layers, wherein the second arm of the AMZ interferometer structure has a temperature control architecture independent of the first arm; and
changing temperature of the second arm independently from the first arm to alter single-mode emission wavelength over a range of 20 cm −1 .
13. The method of claim 12 , wherein the temperature control architecture comprises one or more electrical contacts for biasing the second arm independent of biasing the first arm.
14. The method of claim 13 , wherein the second arm is biased at a different DC current than the first arm.
15. The method of claim 13 , wherein the first arm is maintained at a constant temperature by biasing at a constant DC current, and the temperature of the second arm is changed by independently biasing the second arm at a DC current different from the constant DC current of the first arm.
16. The method of claim 15 , wherein the straight waveguide segments are biased at the constant DC current of the first arm.
17. The method of claim 15 , wherein the DC current of the second arm increases the single-mode emission wavelength of the laser.
18. The method of claim 15 , wherein the DC current of the second arm decreases the single-mode emission wavelength of the laser.
19. The method of claim 14 , wherein increasing the DC current on the first arm decreases the single-mode emission wavelength of the laser.
20. The method of claim 14 , wherein the DC current of the first arm and DC current of the second arm are selected from a look-up table to produce a desired single-mode emission wavelength from the laser.
21. The method of claim 12 , wherein the single mode laser is a quantum cascade laser.
22. The method of claim 12 , wherein the second arm is longer than the first arm by at least 300 μm.
23. The method of claim 12 , wherein the epitaxial semiconductor layers comprise alternating layers of III/V semiconductor material.