IP Library › Granted Patent US 9,645,015
Granted Patent B2
US 9,645,015 · App. 14/056,774 · Granted May 9, 2017

Semiconductor device

Inventors: Jae-Hoon Kim (Icheon, KR); Dae-Yong Shim (Seoul, KR); Suhwan Kim (Seoul, KR)
Assignees: SK HYNIX INC.; SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
G01K7/01
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Quick Facts
Patent No.
US 9,645,015
App. No.
14/056,774
Granted
May 9, 2017
Kind
B2
Abstract

A semiconductor device includes a control voltage generator to generate a control voltage according to a temperature section signal; and a temperature voltage output block to output a temperature voltage varying with a temperature according to the control voltage and the temperature section signal.

Claims (15)

1. A semiconductor device comprising:

a control voltage generator configured to generate a control voltage according to a temperature section signal and an input voltage;

a temperature voltage output block configured to output a temperature voltage varying with a temperature according to the control voltage and the temperature section signal;

a voltage selector configured to select one of a plurality of voltages as the input voltage according to the temperature section signal; and

a voltage divider configured to generate the plurality of voltages by dividing a driving voltage.

2. The semiconductor device of claim 1 , wherein the control voltage generator comprises:

a first resistor block having a first resistance value controlled by the temperature section signal; and

a second resistor block having a second resistance value controlled by the input voltage,

wherein the control voltage is determined by a ratio between the first resistance value and the second resistance value.

3. The semiconductor device of claim 2 , wherein the second resistor block includes a transistor and the second resistance value is controlled by the input voltage applied to a gate of the transistor.

4. The semiconductor device of claim 2 , wherein the temperature voltage output block comprises:

a third resistor block having a third resistance value controlled by the temperature section signal; and

a fourth resistor block having a fourth resistance value controlled by the control voltage,

wherein the temperature voltage is determined by a ratio of the third resistance value and the fourth resistance value.

5. The semiconductor device of claim 4 , wherein the fourth resistor block includes a transistor and the resistance value of the fourth resistor block is controlled by the control voltage applied to a gate of the transistor.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 6, 2017
From: KIM, JAE-HOON; SHIM, DAE-YONG; KIM, SUHWAN
To: SK HYNIX INC.; SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
Reel/Frame 040872/0210 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 22, 2013
From: KIM, SUHWAN
To: SK HYNIX INC.
Reel/Frame 031455/0375 →
Priority Claims (1)
KR 10-2012-0134048 · Nov 23, 2012 · national
Continuity (1)
Related Publication 20140146852A1 · May 29, 2014