IP Library Granted Patent US 9,070,849
Granted Patent B2
US 9,070,849 · App. 14/058,141 · Granted Jun 30, 2015

Parallel plate slot emission array

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Quick Facts
Patent No.
US 9,070,849
App. No.
14/058,141
Granted
Jun 30, 2015
Kind
B2
Abstract

In accordance with an embodiment of the present invention, an article of manufacture includes a side-emitting light emitting diode configured to emit light from more than two surfaces. The article of manufacture includes a first sheet electrically and thermally coupled to a first side of the light emitting diode, and a second sheet electrically and thermally coupled to a second side of the light emitting diode. The article of manufacture further includes a plurality of reflective surfaces configured to reflect light from all of the surfaces of the light emitting diode through holes in the first sheet. The light may be reflected via total internal reflection.

Claims (52)

1. A method comprising:

first attaching a plurality of side-emitting light emitting diodes to a first plate;

second attaching said plurality of side-emitting light emitting diodes to a second plate;

creating a pattern of reflective surfaces between said first and second plates; and

removing a substrate connected to the first plate attached to said plurality of side-emitting light emitting diodes;

wherein said reflective surfaces are configured to reflect light from said plurality of side-emitting light emitting diodes through at least one of said plates, and

wherein said first and second attaching and said creating form a light emitting diode apparatus.

2. The method of claim 1 further comprising adding a transparent dielectric between said first and second plate.

3. The method of claim 1 wherein said pattern of reflective surfaces comprises a material of lower index of refraction than said transparent dielectric.

4. The method of claim 1 wherein an interface between said pattern of reflective surfaces and said transparent dielectric is configured to cause total internal reflection of said light.

5. The method of claim 1 wherein said side-emitting light emitting diodes emit light from more than two sides, and wherein said reflective surfaces reflect light from all of said sides.

6. The method of claim 1 wherein said removing comprises a laser lift off process.

7. The method of claim 1 wherein said first attaching comprises a low melting point metal solder.

8. The method of claim 1 wherein said first plate comprises copper (Cu).

9. The method of claim 1 further comprising singulating said light emitting diode apparatus.

10. The method of claim 1 further comprising:

coupling said light emitting diode apparatus to a mounting base to form a light appliance.

11. The method of claim 10 further comprising:

coupling said plurality of side-emitting light emitting diodes to electronics to convert alternating current for use by said plurality of side-emitting light emitting diodes.

12. A method comprising:

first attaching a plurality of side-emitting light emitting diodes to a first plate;

second attaching said plurality of side-emitting light emitting diodes to a second plate;

creating a pattern of reflective surfaces between said first and second plates; and

forming a plurality of slots in said first plate;

wherein said first and second attaching and said creating form a light emitting diode apparatus; and

wherein said reflective surfaces are configured to reflect light from said plurality of side-emitting light emitting diodes through at least one of said plates and through said plurality of slots.

13. A method comprising:

forming a light emitting diode structure on a substrate;

etching portions of said a light emitting diode structure to form a plurality of individual light emitting diode devices;

forming a first contact layer on the top of said plurality of individual light emitting diode devices;

forming a second contact layer on a flat substrate;

attaching said second contact layer to said first contact layer;

removing said substrate from said plurality of individual light emitting diode devices;

forming a third contact layer opposite said first contact layer on said plurality of individual light emitting diode devices;

patterning first photoresist onto said third contact;

patterning second photoresist in regions between said plurality of individual light emitting diode devices; and

filling regions between said plurality of individual light emitting diode devices and said second photoresist with a transparent dielectric material.

14. The method of claim 13 further comprising wire bonding to said first and third contact layers.

15. The method of claim 13 further comprising:

removing said second photoresist;

adding dielectric material on exposed portions of said a second contact layer;

removing said first photoresist;

plating said third contact and exposed dielectric material, leaving gaps for light to escape.

16. The method of claim 13 further comprising:

forming first vias through said dielectric material, said second contact layer and said flat substrate to said plating.

17. The method of claim 13 further comprising:

forming second vias through said flat substrate to said second contact layer.

18. The method of claim 17 further comprising: adding solder to said first and second vias.

19. The method of claim 13 further comprising: adding a lens over said gaps.

20. The method of claim 13 further comprising: adding a phosphor over said gaps.

21. The method of claim 13 further comprising:

coupling said plurality of individual light emitting diode devices to a mounting base to form a light appliance.

Assignments (6)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073689/0754 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073689/0786 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 28, 2014
From: WANG, LIANG; MOHAMMED, ILYAS; GOTTKE, STEVEN
To: INVENSAS CORPORATION
Reel/Frame 034048/0523 →