METHOD OF FABRICATING LIGHT EXTRACTION SUBSTRATE FOR ORGANIC LIGHT-EMITTING DIODE

1 . A method of fabricating a light extraction substrate for an organic light-emitting diode by atmospheric pressure chemical vapor deposition, comprising forming a light extraction layer by depositing an inorganic oxide at least twice on a base substrate, thereby controlling a structure of a texture formed on a surface of the light extraction layer.

2 . The method of claim 1 , wherein depositing the inorganic oxide at least twice comprises:

depositing the inorganic oxide on the base substrate at a first deposition temperature to form a first thin-film layer; and

depositing the inorganic oxide at a second deposition temperature on the first thin-film layer to form a second thin-film layer, thereby forming the light extraction layer having a bilayer structure.

3 . The method of claim 2 , wherein a thickness of the first thin-film layer ranging from 0.4 to 1.7 μm, and a thickness of the second thin-film layer ranging from 2.1 to 2.9 μm.

4 . The method of claim 2 , wherein the first deposition temperature is different from the second deposition temperature.

5 . The method of claim 4 , wherein the first deposition temperature and the second deposition temperature are different from each other and range from 350 to 640° C.

6 . The method of claim 1 , wherein depositing the inorganic oxide at least twice is implemented as an in-line process.

7 . The method of claim 1 , wherein the inorganic oxide comprises a substance having a greater refractive index than the base substrate.

8 . The method of claim 7 , wherein the inorganic oxide comprises one selected from a group of inorganic substances consisting of ZnO, SnO 2 , SiO 2 , Al 2 O 3 and TiO 2 .

9 . The method of claim 1 , further comprising injecting a dopant during or after depositing the inorganic oxide at least twice.