Reliable passivation layers for semiconductor devices

1. A method for forming a semiconductor device comprising:

providing a substrate, the substrate is prepared with a dielectric layer which includes a top metal level of the device, wherein the top metal level includes top level conductive lines;

forming a top dielectric layer over the top metal level, the top dielectric layer includes top via openings in communication with the top level conductive lines;

forming a patterned top conductive layer on the top dielectric layer, the patterned top conductive layer includes a top via in the top via opening and a top conductive line; and

forming a passivation stack comprising

depositing a first oxide passivation sub-layer to line the patterned conductive layer and exposed top dielectric layer,

performing a plasma surface treatment on a surface of the first oxide passivation sub-layer to form a nitrided layer on the first oxide passivation sub-layer, and

depositing a second nitride passivation sub-layer in direct contact with the nitrided layer, wherein the nitrided layer is separate and distinct from the second nitride passivation sub-layer and comprises a different composition than the deposited second nitride passivation sub-layer and improves the passivation integrity of the passivation stack.

2. The method of claim 1 wherein the patterned top conductive layer is formed by:

forming a top conductive layer, wherein the top conductive layer fills the top via openings and cover the top dielectric layer; and

patterning the top conductive layer by mask and etch technique to form the top via and top conductive line.

3. The method of claim 1 wherein the first oxide passivation sub-layer comprises silicon oxide or doped silicon oxide and the second nitride passivation sub-layer comprises silicon nitride.

4. The method of claim 3 wherein the thickness of the first oxide passivation sub-layer is about 6,000-14,000 Å and the thickness of the second nitride passivation sub-layer is about 4,000-10,000 Å.

5. The method of claim 1 wherein the plasma surface treatment comprises nitrogen containing plasma having N 2 or NH 3 /N 2 .

6. The method of claim 5 wherein performing the plasma surface treatment causes nitridation to occur on the surface of the first oxide passivation sub-layer and forms the nitrided layer.

7. The method of claim 1 wherein the top level conductive lines comprise Cu or Cu alloy and the patterned conductive layer comprises Al.

8. The method of claim 1 wherein the plasma surface treatment is performed with NH 3 /N 2 plasma at a pressure of about several Torr, gas flow of about 5,000-10,000 sccm NH 3 and 5,000-10,000 sccm N 2 , and power of about 500-2,000 W for about 20-120 sec.

9. The method of claim 1 wherein the nitrided layer on the first oxide passivation sub-layer comprises silicon nitride or silicon oxynitride.

10. The method of claim 1 wherein the patterned top conductive layer comprises a void above the top via.

11. A method for forming a semiconductor device comprising:

providing a substrate prepared with a top dielectric layer which includes top via openings;

forming a patterned top conductive layer on the top dielectric layer, the patterned top conductive layer includes a top via in the top via opening and a top conductive line, wherein the patterned top conductive layer serves as an external contact of the semiconductor device for coupling to an external substrate; and

forming a passivation stack comprising

depositing at least a first passivation sub-layer to line the patterned conductive layer and exposed top dielectric layer, and

performing a plasma surface treatment on a surface of the first passivation sub-layer after depositing the first passivation sub-layer, wherein the plasma surface treatment causes nitridation to occur on the surface of the first passivation sub-layer to form a thin nitrided layer, wherein the thin nitrided layer facilitates in modulating a subsequent deposition process used for depositing a second passivation sub-layer on the first passivation sub layer.

12. The method of claim 11 comprising:

depositing a second passivation sub-layer over the first passivation sub-layer.

13. The method of claim 12 wherein the plasma surface treatment which forms the thin nitrided layer on the surface of the first passivation sub-layer is performed prior to depositing the second passivation sub-layer, wherein the thin nitrided layer is disposed between the first and second passivation sub-layers.

14. The method of claim 12 wherein the first passivation sub-layer comprises silicon oxide, doped silicon oxide or doped silicon nitride and the second passivation sub-layer comprises silicon nitride.

15. The method of claim 12 wherein the thickness of the first passivation sub-layer is about 6,000-14,000 Å and the thickness of the second passivation sub-layer is about 4,000-10,000 Å.

16. The method of claim 12 wherein the thin nitrided layer comprises composition which is different than the second passivation sub-layer.

17. The method of claim 11 wherein the substrate includes a dielectric layer having a top metal level of the device, wherein the top metal level includes top level conductive lines, wherein the top via of the patterned conductive layer is in communication with the top level conductive lines.

18. The method of claim 17 wherein the top level conductive lines comprise Cu or Cu alloy and the patterned conductive layer comprises Al.

19. The method of claim 11 wherein the patterned top conductive layer is formed by:

forming a top conductive layer, wherein the top conductive layer fills the top via openings and cover the top dielectric layer; and

patterning the top conductive layer by mask and etch technique to form the top via and top conductive line.

20. The method of claim 11 wherein the plasma surface treatment comprises nitrogen containing plasma having N 2 or NH 3 /N 2 .