Semiconductor arrangement having capacitor separated from active region

1. A semiconductor arrangement comprising:

an active region comprising a semiconductor device;

a first dielectric layer overlying the active region;

a second dielectric layer overlying the active region and in direct contact with the first dielectric layer; and

a capacitor extending through the first dielectric layer and the second dielectric layer, the capacitor having a first electrode layer, a second electrode layer, and an insulating layer between the first electrode layer and the second electrode layer, wherein at least three additional dielectric layers are between a bottom surface of the capacitor and the active region.

2. The semiconductor arrangement of claim 1 , wherein at least one dielectric layer of the additional dielectric layers is between the bottom surface of the capacitor and a bit line disposed above the active region.

3. The semiconductor arrangement of claim 1 , wherein an aspect ratio of a height of the capacitor to a width of the capacitor is between about 5 to about 25.

4. The semiconductor arrangement of claim 1 , wherein a height of the capacitor is between about 250 nm to about 1200 nm.

5. The semiconductor arrangement of claim 1 , wherein a width of the capacitor is between about 30 nm to about 200 nm.

6. The semiconductor arrangement of claim 1 , comprising a conformal etch stop layer in contact with the second electrode layer.

7. The semiconductor arrangement of claim 1 , wherein between 1 dielectric layer to 5 dielectric layers are above the capacitor.

8. The semiconductor arrangement of claim 1 , wherein at least one oxide layer is above the capacitor.

9. A semiconductor arrangement comprising:

an active region comprising a first semiconductor device and a second semiconductor device that share a source/drain region; and

a capacitor coupled to the source/drain region and having a first electrode layer, a second electrode layer, and an insulating layer between the first electrode layer and the second electrode layer, at least one dielectric layer between a bottom surface of the capacitor and a bit line disposed above the active region.

10. The semiconductor arrangement of claim 9 , wherein at least three dielectric layers are between the bottom surface of the capacitor and the active region.

11. The semiconductor arrangement of claim 9 , wherein a height of the capacitor is between about 250 nm to about 1200 nm.

12. The semiconductor arrangement of claim 9 , wherein a width of the capacitor is between about 30 nm to about 200 nm.

13. The semiconductor arrangement of claim 9 , wherein the capacitor extends between 2 dielectric layers to 10 dielectric layers.

14. The semiconductor arrangement of claim 9 , wherein the capacitor overlies the source/drain region.

15. The semiconductor arrangement of claim 9 , wherein at least one oxide layer is above the capacitor.

16. A semiconductor arrangement comprising:

an active region comprising a semiconductor device, the semiconductor device comprising:

a source/drain region; and

a gate region;

a capacitor having a first electrode layer, a second electrode layer, and an insulating layer between the first electrode layer and the second electrode layer, the first electrode layer electrically coupled to the source/drain region; and

a conformal etch stop layer in contact with the second electrode layer, wherein the conformal etch stop layer has a uniform thickness.

17. The semiconductor arrangement of claim 16 , comprising:

a first dielectric layer over the source/drain region;

a first etch stop layer over the first dielectric layer; and

a second dielectric layer over the first etch stop layer.

18. The semiconductor arrangement of claim 17 , wherein a bottom surface of the first electrode layer is above the second dielectric layer.

19. The semiconductor arrangement of claim 17 , comprising:

a second etch stop layer over the second dielectric layer; and

a third dielectric layer over the second etch stop layer, the first electrode layer extending through the third dielectric layer.

20. The semiconductor arrangement of claim 17 , comprising a metal contact extending through the second dielectric layer and in contact with the first electrode layer.