Multilayer ceramic capacitor
With a multilayer ceramic capacitor whose average grain size of the dielectric grains present at the outermost layer position P 1 in the laminate is given by D 1 , average grain size of the dielectric grains present at the center position P 2 in the laminate is given by D 2 , and average grain size of the dielectric grains present at the 25%-penetrated position P 3 which is a position penetrated into the laminate by 25% is given by D 3 , growth of the dielectric grains occurring as a result of sintering is partially suppressed in such a way that the relationships of average grain sizes D 1 , D 2 , and D 3 satisfy the conditions of 1.5×D 1 <D 3 and 1.2×D 2 <D 3 . This way, a sufficient CR product can be obtained even with a dielectric thickness of 1 μm or less.
1. A multilayer ceramic capacitor with a laminate constituted by dielectric layers alternately laminated with internal electrode layers, said multilayer ceramic capacitor satisfies conditions of 1.5×D 1 <D 3 and 1.2×D 2 <D 3 as relationships of grain sizes D 1 , D 2 and D 3 , where D 1 represents an average grain size of dielectric grains present at an outermost layer position in the laminate in a laminating direction, D 2 represents an average grain size of dielectric grains present at a center position in the laminate in the laminating direction, and D 3 represents an average grain size of dielectric grains present at an intermediate position equidistant from the outermost layer position and the center position in the laminate in the laminating direction.
2. A multilayer ceramic capacitor according to claim 1 , wherein a relationship of average grain sizes D 2 and D 3 further satisfies a condition of 1.5×D 2 <D 3 .
3. A multilayer ceramic capacitor according to claim 1 , wherein a relationship of average grain sizes D 3 and D 4 further satisfies a condition of 1.5×D 4 <D 3 , where D 4 represents an average grain size of dielectric grains present at an outermost edge position in the laminate in a direction orthogonal to the laminating direction.
4. A multilayer ceramic capacitor according to claim 2 , wherein a relationship of average grain sizes D 3 and D 4 further satisfies a condition of 1.5×D 4 <D 3 , where D 4 represents an average grain size of dielectric grains present at an outermost edge position in the laminate in a direction orthogonal to the laminating direction.
5. A multilayer ceramic capacitor according to claim 1 , wherein a per-layer thickness of the dielectric layer is 0.8 μm, while the average grain size D 1 is 0.4 μm or less.
6. A multilayer ceramic capacitor according to claim 2 , wherein a per-layer thickness of the dielectric layer is 0.8 μm, while the average grain size D 1 is 0.4 μm or less.
7. A multilayer ceramic capacitor according to claim 3 , wherein a per-layer thickness of the dielectric layer is 0.8 μm, while the average grain size D 1 is 0.4 μm or less.
8. A multilayer ceramic capacitor according to claim 1 , wherein a ceramic margin is formed in a manner covering an outside of the laminate, with a grain growth suppressant that suppresses grain growth in the dielectric layer added to the margin.
9. A multilayer ceramic capacitor according to claim 2 , wherein a ceramic margin is formed in a manner covering an outside of the laminate, with a grain growth suppressant that suppresses grain growth in the dielectric layer added to the margin.
10. A multilayer ceramic capacitor according to claim 3 , wherein a ceramic margin is formed in a manner covering an outside of the laminate, with a grain growth suppressant that suppresses grain growth in the dielectric layer added to the margin.
11. A multilayer ceramic capacitor according to claim 4 , wherein a ceramic margin is formed in a manner covering an outside of the laminate, with a grain growth suppressant that suppresses grain growth in the dielectric layer added to the margin.
12. A multilayer ceramic capacitor according to claim 8 , wherein the grain growth suppressant that suppresses grain growth in the dielectric layer is added to a reverse-pattern sheet provided to compensate for a height difference generating between the dielectric layer and internal electrode layer.
13. A multilayer ceramic capacitor according to claim 8 , wherein the grain growth suppressant contains at least one type of element selected from a group that includes Mn and Mg.
14. A multilayer ceramic capacitor according to claim 12 , wherein the grain growth suppressant contains at least one type of element selected from a group that includes Mn and Mg.