Method and system for designing Fin-FET semiconductor device

1. A method comprising:

providing a first layout of a semiconductor device comprising a plurality of cells representing circuit elements, the circuit elements comprising a plurality of fin field effect transistors (Fin-FETs);

providing a cell library comprising a plurality of cells in a processor, wherein each of the plurality of cells in the cell library is displayed with a respectively different marker indicating a respective fin height, wherein the step of providing a cell library further comprises selecting a respective fin height for at least one Fin-FET in the cell library so that the at least one Fin-FET has a different speed or different power consumption from a respective Fin-FET in the first layout of the semiconductor device; and

generating, in the processor, a second layout for the semiconductor device to be fabricated, by placing or replacing at least one cell from the cell library in a respective location in the first layout of the semiconductor device,

wherein the at least one cell from the cell library comprises a Fin-FET with a respective fin height different from an adjacent Fin-FET in the second layout of the semiconductor device.

2. The method of claim 1 , wherein

the plurality of cells in the first layout of the semiconductor device comprises Fin-FETs having the same fin height.

3. The method of claim 1 , wherein the step of providing a cell library comprises

inputting, to a processor, data representing configurations of a plurality of Fin-FETs having different fin heights;

generating, in the processor, a cell library comprising a plurality of cells, wherein each of the plurality of cells in the cell library is displayed with a respectively different marker indicating a respective fin height.

4. The method of claim 3 , wherein

the cell library has at least one Fin-FET with higher speed and lower power consumption than a respective Fin-FET in the first layout of the semiconductor device.

5. The method of claim 1 , wherein the step of generating the second layout of the semiconductor device comprises:

placing at least one cell from the cell library in a respective location in the first layout of the semiconductor device; and

replacing at least some of the plurality of cells in the first layout with one of the plurality of cells from the cell library, based on a set of performance specifications for the semiconductor device.

6. The method of claim 5 , further comprising:

routing to connect the plurality of cells in the second layout for the semiconductor device to be fabricated.

7. The method of claim 5 , further comprising:

outputting, from the processor, the second layout for the semiconductor device to be fabricated.

8. The method of claim 5 , wherein

the set of performance specifications in the step of replacing each of the plurality of cells comprise at least one of an area for the semiconductor device, speed, power consumption and signal slew rate balance of the semiconductor device.

9. The method of claim 5 , wherein

a respective one of the plurality of cells in the first layout of the semiconductor device is replaced with a respective cell from the cell library having a higher fin height and a lower gate threshold voltage than the one of the plurality of cells.

10. The method of claim 5 , wherein the step of replacing each of the plurality of cells further comprises

identifying at least one critical path of the semiconductor device;

analyzing performance parameters of the at least one critical path; and

changing at least one cell in the at least one critical path so as to meet the set of performance specifications for the semiconductor device.

11. A method for generating a design of a semiconductor device, comprising:

providing a first layout of a semiconductor device comprising a plurality of cells representing circuit elements, the circuit elements comprising a plurality of fin field effect transistors (Fin-FETs);

inputting, to a processor, data representing configurations of a plurality of Fin-FETs having different fin heights;

selecting a respective fin height for at least one Fin-FET in the cell library so that the at least one Fin-FET has a different speed or different power consumption from a respective Fin-FET in the first layout of the semiconductor device;

generating, in the processor, a cell library comprising a plurality of cells, wherein each of the plurality of cells in the cell library is displayed with a respectively different marker indicating a respective fin height;

placing at least one cell from the cell library in a respective location in the first layout of the semiconductor device to generate, in the processor, a second layout for the semiconductor device to be fabricated; and

replacing at least some of the plurality of cells in the first layout with one of the plurality of cells from the cell library, based on a set of performance specifications for the semiconductor device;

wherein the at least one cell from the cell library comprises a Fin-FET with a respective fin height different from an adjacent Fin-FET in the second layout of the semiconductor device.

12. The method of claim 11 , wherein

the set of performance specifications in the step of replacing each of the plurality of cells comprise at least one of an area for the semiconductor device, speed, power consumption and signal slew rate balance of the semiconductor device.

13. The method of claim 11 , further comprising:

routing to connect the plurality of cells in the second layout for the semiconductor device to be fabricated; and

outputting, from the processor, the second layout for the semiconductor device to be fabricated.

14. A system, comprising:

a non-transitory, machine readable storage medium encoded with data representing a first layout of a semiconductor device comprising a plurality of cells representing circuit elements, the circuit elements comprising fin field effect transistors (Fin-FETs); and

a processor coupled to access the storage medium, the processor programmed to perform a method comprising:

providing a cell library comprising a plurality of cells in a processor, wherein each of the plurality of cells in the cell library is displayed with a respectively different marker indicating a respective fin height, wherein a respective fin height is selected for at least one Fin-FET in the cell library so that the at least one Fin-FET has a different speed or different power consumption from a respective Fin-FET in the first layout of the semiconductor device; and

generating, in the processor, a second layout for the semiconductor device to be fabricated, by placing or replacing at least one cell from the cell library in a respective location in the first layout of the semiconductor device,

wherein the at least one cell from the cell library comprises a Fin-FET with a respective fin height different from an adjacent Fin-FET in the second layout of the semiconductor device.

15. The system of claim 14 , wherein the processor is configured to perform the method further comprising:

placing at least one cell from the cell library in a respective location in the first layout of the semiconductor device; and

replacing at least some of the plurality of cells in the first layout with one of the plurality of cells from the cell library, based on a set of performance specifications for the semiconductor device.

16. The system of claim 15 , wherein in the method the processor is configured to perform,

the set of performance specifications in the step of replacing each of the plurality of cells comprise at least one of an area for the semiconductor device, speed, power consumption and signal slew rate balance of the semiconductor device.

17. The system of claim 14 , wherein the processor is configured to perform the method further comprising:

routing to connect the plurality of cells in the second layout for the semiconductor device to be fabricated; and

outputting, from the processor, the second layout for the semiconductor device to be fabricated.