IP Library Granted Patent US 8,994,195
Granted Patent B2
US 8,994,195 · App. 14/071,055 · Granted Mar 31, 2015

Microelectronic assembly with impedance controlled wirebond and conductive reference element

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Quick Facts
Patent No.
US 8,994,195
App. No.
14/071,055
Granted
Mar 31, 2015
Kind
B2
Abstract

A microelectronic assembly can include a microelectronic device having device contacts exposed at a surface thereof and an interconnection element having element contacts and having a face adjacent to the microelectronic device. Conductive elements, e.g., wirebonds connect the device contacts with the element contacts and have portions extending in runs above the surface of the microelectronic device. A conductive layer has a conductive surface disposed at at least a substantially uniform distance above or below the plurality of the runs of the conductive elements. In some cases, the conductive material can have first and second dimensions in first and second horizontal directions which are smaller than first and second corresponding dimensions of the microelectronic device. The conductive material is connectable to a source of reference potential so as to achieve a desired impedance for the conductive elements.

Claims (20)

1. A microelectronic assembly comprising:

a semiconductor die having microelectronic circuitry thereon, the semiconductor die having a front surface and a rear surface remote therefrom and device contacts exposed at the front surface, and one or more surface conductive elements supported by the semiconductor die and extending along the front surface, wherein the one or more surface conductive elements includes a metal layer at the front surface of the semiconductor die extending along the front surface, each surface conductive element having a planar surface parallel to the front surface;

an interconnection element underlying the rear surface of the semiconductor die, the interconnection element having a plurality of element contacts thereon;

a plurality of wire bonds connecting the device contacts with the element contacts, the wire bonds disposed above the one or more surface conductive elements, the wire bonds having substantial portions extending at least generally parallel to the one or more surface conductive elements,

wherein the one or more surface conductive elements is connectable to a source of reference potential, such that a desired impedance is achieved for the wire bonds.

2. The microelectronic assembly as claimed in claim 1 , wherein the one or more surface conductive elements consists essentially of metal.

3. The microelectronic assembly as claimed in claim 1 , wherein the one or more surface conductive elements is exposed at the front surface.

4. The microelectronic assembly as claimed in claim 2 , wherein the one or more surface conductive elements includes openings, wherein the wire bonds connect to the device contacts through the openings in the one or more surface conductive elements.

5. The microelectronic assembly as claimed in claim 2 , wherein the one or more surface conductive elements comprises a conductive metal plane.

6. The microelectronic assembly as claimed in claim 2 , wherein the one or more surface conductive elements comprises a plurality of conductive metal strips.

7. The microelectronic assembly comprising:

a semiconductor die having microelectronic circuitry thereon, the semiconductor die having a front surface and a rear surface remote therefrom and device contacts exposed at the front surface, and a plurality of metal strips supported by the semiconductor die and extending along the front surface, each metal strip having a planar surface parallel to the front surface;

an interconnection element including a dielectric element underlying the rear surface of the semiconductor die, the interconnection element having a plurality of element contacts thereon;

a plurality of wire bonds connecting the device contacts with the element contacts, the wire bonds extending in runs spaced a first height above the front surface and above the one or more metal strips and at least generally parallel to the metal strips such that the metal strips are between the semiconductor die and the wire bonds,

wherein the metal strips are connectable to a source of reference potential, such that a desired impedance is achieved for the wire bonds.

8. The microelectronic assembly as claimed in claim 7 , wherein the metal strips are exposed at the front surface.

9. The microelectronic assembly as claimed in claim 7 , wherein the metal strips include openings, wherein the wire bonds connect to the device contacts through the openings in the metal strips.

10. The microelectronic assembly as claimed in claim 8 , wherein the metal strips include openings, wherein the wire bonds connect to the device contacts through the openings in the metal strips.

11. The microelectronic assembly as claimed in claim 7 , wherein the semiconductor die and the metal strips are bonded together.

12. The microelectronic assembly as claimed in claim 11 , wherein the semiconductor die and the metal strips are bonded together with an adhesive.

Assignments (7)
CHANGE OF NAME Recorded Nov 21, 2025
From: TESSERA LLC
To: ADEIA SEMICONDUCTOR SOLUTIONS LLC
Reel/Frame 073658/0661 →
CHANGE OF NAME Recorded Nov 21, 2025
From: TESSERA, INC.
To: TESSERA LLC
Reel/Frame 073657/0979 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 13, 2013
From: TESSERA RESEARCH LLC
To: TESSERA, INC.
Reel/Frame 031696/0296 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 7, 2013
From: HABA, BELGACEM; MARCUCCI, BRIAN
To: TESSERA RESEARCH LLC
Reel/Frame 031660/0431 →