IP Library Granted Patent US 8,964,479
Granted Patent B2
US 8,964,479 · App. 14/071,285 · Granted Feb 24, 2015

Techniques for sensing a semiconductor memory device

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Quick Facts
Patent No.
US 8,964,479
App. No.
14/071,285
Granted
Feb 24, 2015
Kind
B2
Abstract

Techniques for sensing a semiconductor memory device are disclosed. In one embodiment, the techniques may be realized as a semiconductor memory device comprising a plurality of memory cells arranged in an array of rows and columns and data sense amplifier circuitry coupled to at least one of the plurality of memory cells. The data sense amplifier circuitry may comprise first amplifier circuitry and resistive circuitry, wherein the first amplifier circuitry and the resistive circuitry may form a feedback loop.

Claims (26)

1. An amplifier circuit comprising:

a first transistor coupled to a first control line for controlling a state of the first transistor;

a second transistor coupled to a second control line for controlling a state of the second transistor, wherein the first transistor and the second transistor are arranged in a series configuration and directly coupled at a common node; and

resistive circuitry directly coupled to the first transistor and the second transistor at the common node and to an input node of the amplifier circuit.

2. The amplifier circuit according to claim 1 , wherein the first transistor is a power transistor and the second transistor is a switching transistor.

3. The amplifier circuit according to claim 2 , wherein the power transistor is coupled to a power source.

4. The amplifier circuit according to claim 1 , wherein the resistive circuitry forms a feedback loop for the amplifier circuit.

5. The amplifier circuit according to claim 4 , wherein the resistive circuitry comprises a first resistive transistor.

6. The amplifier circuit according to claim 5 , wherein the common node is an output node of the amplifier circuitry, and wherein the first resistive transistor is coupled to the input node of the amplifier circuit and the output node of the amplifier circuit.

7. The amplifier circuit according to claim 6 , wherein a gate region of the first resistive transistor is coupled to the output node of the amplifier circuit.

8. The amplifier circuit according to claim 5 , wherein the resistive circuitry further comprises a second resistive transistor.

9. The amplifier circuit according to claim 8 , wherein the second resistive transistor is coupled to the first resistive transistor and an output node of the amplifier circuit.

10. The amplifier circuit according to claim 9 , wherein a gate region of the second resistive transistor is coupled to the output node of the amplifier circuit.

11. The amplifier circuit according to claim 1 , further comprising:

a third transistor coupled to third control line for controlling a state of the third transistor; and

a fourth transistor coupled to the third transistor;

wherein the third transistor and the fourth transistor are arranged in a series configuration.

12. The amplifier circuit according to claim 11 , wherein a gate region of the fourth transistor is coupled to the first transistor and the second transistor.

13. The amplifier circuit according to claim 11 , wherein the third transistor is a power transistor and the fourth transistor is a switching transistor.

14. The amplifier circuit according to claim 13 , wherein the power transistor is coupled to a power source.

15. The amplifier circuit according to claim 1 , further comprising pre-charge circuitry to pre-charge the amplifier circuit.

16. The amplifier circuit according to claim 15 , wherein the pre-charge circuitry is coupled to the first transistor and the second transistor.

17. The amplifier circuit according to claim 1 , further comprising inverter circuitry to change an output state of the amplifier circuit.

18. The amplifier circuit according to claim 17 , wherein the inverter circuitry comprises a transistor pair arranged in a series configuration.

19. The amplifier circuit according to claim 1 , further comprising input/output circuitry comprising selection circuitry for controlling access to the amplifier circuit.

20. The amplifier circuit according to claim 19 , wherein the input/output circuitry further comprises reset circuitry for resetting a state of the amplifier circuit.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →