Mechanisms for semiconductor device structure
Embodiments of mechanisms of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a metal gate structure formed over the substrate. The semiconductor device structure further includes a funnel shaped hard mask structure formed over the metal gate structure. Formation of voids, which tend to be formed in a rectangular hard mask structure, is prevented. In addition, formation of a self-aligned contact in the semiconductor device becomes easier, and risks of shortage between the contact and a metal gate structure in the semiconductor device decreased. In addition, a method for forming the semiconductor device structure is also provided. The method may include a gate last process.
1. A semiconductor device structure, comprising:
a substrate;
a metal gate structure formed over the substrate;
a spacer comprising an inner side and an outermost side, wherein the inner side is closer to the metal gate structure than the outermost side, wherein the inner side is formed on the metal gate structure; and
a funnel shaped hard mask structure formed over and directly aligned with the metal gate structure, wherein a portion of a top surface of the funnel shaped hard mask structure extends horizontally past the outmost side of the spacer.
2. The semiconductor device structure as claimed in claim 1 , further comprising:
a contact formed over the substrate, wherein a sidewall of the contact is adjacent to an edge of a top surface of the funnel shaped hard mask structure.
3. The semiconductor device structure as claimed in claim 1 , wherein the funnel shaped hard mask structure has a cone-shaped top portion and a tube-shaped bottom portion.
4. The semiconductor device structure as claimed in claim 1 , wherein a top surface of the funnel shaped hard mask structure has a first width in a range from 12 nm to 200 nm.
5. The semiconductor device structure as claimed in claim 1 , wherein a bottom surface of the funnel shaped hard mask structure has a second width in a range from 10 nm to 200 nm.
6. The semiconductor device structure as claimed in claim 1 , wherein a thickness of the funnel shaped hard mask structure is in a range from 10 nm to 50 nm.
7. The semiconductor device structure as claimed in claim 1 , wherein an angle between a top surface and a sidewall of the funnel shaped hard mask structure is in a range from 30° to 75°.
8. The semiconductor device structure as claimed in claim 1 , wherein the funnel shaped hard mask structure is made of silicon nitride.
9. The semiconductor device structure as claimed in claim 3 , wherein an angle between a sidewall of the cone-shaped top portion and a sidewall of the tube-shaped bottom portion is in a range from 120° to 165°.
10. A semiconductor device structure, comprising:
a substrate;
a metal gate structure formed over the substrate;
a spacer comprising an inner side and an outermost side, wherein the inner side is closer to the metal gate structure than the outermost side, wherein the inner side is formed on the metal gate structure;
a funnel shaped hard mask structure formed over and directly aligned with the metal gate structure, wherein a portion of a top surface of the funnel shaped hard mask structure extends horizontally past the outmost side of the spacer, wherein the funnel shaped hard mask structure is made of silicon nitride; and
a self-aligned contact formed over the substrate.
11. The semiconductor device structure as claimed in claim 10 , wherein the funnel shaped hard mask structure has a cone-shaped top portion and a tube-shaped bottom portion.
12. The semiconductor device structure as claimed in claim 10 , wherein a thickness of the funnel shaped hard mask structure is in a range of 10 nm to 50 nm.
13. The semiconductor device structure as claimed in claim 10 , wherein an angle between a top surface and a sidewall of the funnel shaped hard mask structure is in a range from 30° to 75°.
14. The semiconductor device structure as claimed in claim 10 , wherein the first width is in a range from 12 nm to 200 nm.
15. The semiconductor device structure as claimed in claim 10 , the second width is in a range from 10 nm to 200 nm.
16. The semiconductor device structure as claimed in claim 11 , wherein an angle between a sidewall of the cone-shaped top portion and a sidewall of the tube-shaped bottom portion is in a range from 120° to 165°.