Semiconductor memory system including a plurality of semiconductor memory devices
A communication line is connected to first and second chips, and held at a first signal level. A monitor circuit changes a signal level of the communication line from the first signal to a second signal level while one of the first and second chips uses a current larger than a reference current. When the signal level of the communication line is the second signal level, the other of the first and second chips is controlled to a wait state that does not transfer to an operating state of using a current larger than the reference current.
1. A semiconductor memory system comprising:
a first semiconductor memory device;
a second semiconductor memory device; and
a controller electrically connected to the first and second semiconductor memory devices,
wherein when the first semiconductor memory device starts a program operation, the controller controls the second semiconductor memory device to a waiting state,
the waiting state of the second semiconductor memory device occurs during the program operation of the first semiconductor memory device, and
the waiting state of the second semiconductor memory device is shorter than the program operation of the first semiconductor memory device.
2. The system according to claim 1 , wherein at least one of the first and second semiconductor memory devices is configured by a NAND flash memory.
3. The system according to claim 1 , wherein the system is configured by a multi chip package.
4. The system according to claim 1 , wherein the system is configured by a memory card including at least one NAND flash memory.
5. A semiconductor memory system comprising :
a first semiconductor memory device;
a second semiconductor memory device; and
a controller electrically connected to the first and second semiconductor memory devices,
wherein the controller starts a program of the second semiconductor memory device in a slightly delayed state, after the first semiconductor memory device starts a program and
the second semiconductor memory device starts the program of the second semiconductor memory device, while the first semiconductor memory device performs the program of the first semiconductor memory device.
6. The system according to claim 5 , wherein at least one of the first and second semiconductor memory devices is configured by a NAND flash memory.
7. The system according to claim 5 , wherein the system is configured by a multi chip package.
8. The system according to claim 5 , wherein the system is configured by a memory card including at least one NAND flash memory.
9. The system according to claim 1 , wherein at least one of the first and second semiconductor memory devices is configured by a NAND flash memory.
10. The system according to claim 1 , wherein the system is configured by a multi chip package.
11. The system according to claim 1 , wherein the system is configured by a memory card including at least one NAND flash memory.
12. The system according to claim 1 , wherein when the first semiconductor memory device starts a verify operation, the controller controls the second semiconductor memory device to a waiting state.
13. The system according to claim 5 , wherein the controller starts a verify operation of the second semiconductor memory device in a slightly delayed state, after the first semiconductor memory device starts a verify operation.
14. The system according to claim 5 ,
wherein when one of the first and second semiconductor memory devices consumes a current larger than a reference current, the controller controls the other of the first and second semiconductor memory devices to a waiting state.
15. The system according to claim 1 , wherein
when the first semiconductor memory is busy status, the second semiconductor memory is ready status,
the ready status is shorter than the busy status.
16. The system according to claim 5 , wherein
The program operation of the second semiconductor memory is started during the program operation of the first semiconductor memory.