LED package and method of manufacturing the same
A method is provided for manufacturing a LED package base including providing a metal core substrate having a top surface and a bottom surface and forming two first trenches in the metal core substrate. The first trenches extend from the top surface to the bottom surface. The method further includes at least partially filling in the first trenches with first dielectric material to form dielectric isolations. The dielectric isolations divide the metal core substrate into three metal core portions. Two of the metal core portions may be configured to serve as LED package electrodes. The method also includes applying a second dielectric material to cover at least a portion of the first dielectric material, and forming a conductive layer over the second dielectric material to form circuit contacts. The conductive layer includes a first conductive material.
1. A light emitting diode package, comprising:
a light emitting diode package base including:
a metal core substrate having top surface and bottom surface and side surfaces;
two dielectric isolations formed from the top surface to the bottom surface of the metal core substrate to divide the metal core substrate into three metal portions, wherein two of the three metal portions serve as light emitting diode package electrodes and the side surfaces of the metal core substrate, the dielectric isolations comprising a first dielectric material;
a dielectric layer covering at least a portion of the first dielectric material, the dielectric layer including a second dielectric material;
a conductive layer formed on the dielectric layer, the conductive layer configured to serve as circuit contacts, the conductive layer comprising a first conductive material; and
at least two conductive vias formed through the conductive layer and the dielectric layer, the conductive vias comprising a second conductive material, wherein each conductive via connects at least one of the circuit contacts to at least one of the metal portions.
2. The light emitting diode package of claim 1 , wherein at least one of the first conductive material and the second conductive material comprises at least one of Cu, Al, Au, Ni, Ti, Ag, Sn, and metal alloy.
3. The light emitting diode package of claim 1 , wherein the metal core substrate comprises at least one of Cu, Al, Au, Ni, metal alloy, and graphite.
4. The light emitting diode package of claim 1 , wherein the light emitting diode package base further includes a thermal projection on the top surface of the metal core substrate, wherein the thermal projection is between adjacent dielectric isolations and adjacent conductive vias, the thermal projection comprising thermal conductive material.
5. The light emitting diode package of claim 4 , wherein the thermal conductive material comprises at least one of Cu, Al, Au, Ni, metal alloy, and graphite.
6. The light emitting diode package of claim 1 , wherein at least one of the first dielectric material and the second dielectric material comprises at least one of epoxy, polymer resin, a pre-preg composite, Al 2 O 3 , AlN, plastic, and SiO 2 .
7. The light emitting diode package of claim 1 , wherein the dielectric layer covers at least a portion of the top surface of the metal core substrate.
8. The light emitting diode package of claim 1 further comprising:
a light emitting diode chip comprising two contact pads and a thermal pad between the contact pads,
wherein the thermal pad is thermally coupled to the thermal projection via bonding material and wherein each contact pad is electrically coupled to an associated light emitting diode package electrode through the circuit contacts and conductive vias.
9. The light emitting diode package of claim 8 further comprising an optical lens covering the light emitting diode chip.