Process for production of fluorescent substance
The embodiment provides a process for production of an oxynitride fluorescent substance. In the process, a compound represented by the formula: (Sr,Eu) 2 Si 5 N 8 , silicon nitride and aluminum nitride are mixed and then fired in a nitrogen atmosphere under high pressure.
1. A process for production of a green light-emitting oxynitride fluorescent substance, comprising:
a first step in which at least a compound containing oxygen and strontium, europium oxide, and silicon powder or silicon nitride are mixed and placed in a firing container made of non-oxide material, and then fired in an atmosphere containing hydrogen and nitrogen to produce an intermediate product comprising strontium, europium, silicon and nitrogen; and
a second step in which said intermediate product obtained in the first step, silicon nitride, silicon powder or a combination thereof and aluminum nitride are mixed and then fired in a nitrogen atmosphere under high pressure,
wherein said oxynitride fluorescent substance has essentially the same crystal structure as Sr 3 Al 3 Si 13 O 2 N 21 .
2. The process according to claim 1 , wherein said compound containing oxygen and strontium is strontium oxide or strontium hydroxide.
3. The process according to claim 1 , wherein said intermediate product contains a component represented by the formula: (Sr,Eu) 2 Si 5 N 8 .
4. The process according to claim 1 , wherein said oxynitride fluorescent substance is a divalent europium-activated phosphor represented by the following formula:
(Sr 1-x Eu x ) a AlSi b O c N d
in which x, a, b, c and d are numbers satisfying the conditions of 0<x<1, 0.93<a<1.3, 4.0<b<5.8, 0.6<c<1.0 and 6<d<11, respectively.
5. The process according to claim 1 , wherein said intermediate product contains strontium, europium and oxygen in such amounts that the ratio by mole of oxygen to the sum of strontium and europium is less than 1.0.
6. The process according to claim 1 , wherein said oxynitride fluorescent substance is a divalent europium-activated phosphor.
7. The process according to claim 1 , wherein a firing temperature in the second step is 1700° C. or more.
8. The process according to claim 1 , wherein a firing temperature in the first step is in the range of 1300 to 1600° C.
9. The process according to claim 1 , wherein the silicon nitride, silicon powder or a combination thereof contains silicon powder.
10. The process according to claim 9 , wherein said silicon powder has a mean particle size ranging from not less than 5 μm to less than 150 μm.
11. The process according to claim 1 , wherein the intermediate product; silicon nitride, silicon powder or a combination thereof; and aluminum nitride are pre-fired in an atmosphere containing hydrogen and nitrogen before the firing in the second step.
12. The process according to claim 11 , wherein a pre-firing temperature is in the range of 1400 to 1650° C.