Semiconductor device and fabrication method
Semiconductor devices and methods are provided. The semiconductor device can include a semiconductor substrate, a plurality of solder pads disposed on the semiconductor substrate, a first insulating layer disposed over the semiconductor substrate, a columnar electrode disposed over the solder pad, and a solder ball disposed on the columnar electrode. The first insulating layer can include a first opening to expose a solder pad of the plurality of solder pads. The columnar electrode can include a bulk material and a through hole in the bulk material. The through hole can expose at least a surface portion of the solder pad. The solder ball can include a convex metal head on a top surface of the bulk material of the columnar electrode, and a filling part filled in the through hole.
1. A method for forming a semiconductor device, comprising:
providing a semiconductor substrate including a plurality of solder pads on the semiconductor substrate;
forming a first insulating layer over the semiconductor substrate, the first insulating layer including a first opening to expose a solder pad of the plurality of solder pads;
forming a seed layer on a portion of the first insulating layer and on a bottom and a sidewall of the first opening, the seed layer contacting the solder pad;
forming a re-wiring layer on a first portion of the seed layer and within the first opening, wherein the re-wiring layer is electrically connected to the solder pad;
forming a columnar electrode on a portion of the re-wiring layer outside of the first opening, the columnar electrode including a bulk material and a through hole in the bulk material, the through hole exposing at least a surface portion of the re-wiring layer; and
forming a solder ball on the columnar electrode, the solder ball including a convex metal head on a top surface of the bulk material of the columnar electrode and a filling part filled in the through hole in the columnar electrode;
wherein forming the columnar electrode includes:
forming a third photoresist layer on the re-wiring layer and on a second portion of the seed layer, the third photoresist layer including a groove outside of the first opening to expose a surface portion of the re-wiring layer, and at least one third photoresist layer column being within the groove;
filling the groove with a metal to form the bulk material of the columnar electrode;
removing the at least one third photoresist layer column and the third photoresist layer outside of the bulk material to leave a through hole at a position corresponding to the at least one third photoresist layer column, wherein the through hole and the bulk material constitute the columnar electrode; and
using the re-wiring layer as an etch mask to remove the second portion of the seed layer to provide an exposed portion of the first insulating layer.
2. The method of claim 1 , wherein forming the solder ball includes:
forming a second insulating layer on the re-wiring layer and on the exposed portion of first insulating layer, wherein the second insulating layer has a top surface lower than the top surface of the columnar electrode;
forming a fourth photoresist layer on the second insulating layer, wherein the fourth photoresist layer includes a sixth opening to expose the columnar electrode and a first portion of the second insulating layer outside of the columnar electrode;
using the fourth photoresist layer and the bulk material of the columnar electrode as a mask to remove the first portion of the second insulating layer from the through hole;
removing the fourth photoresist layer;
placing a printing screen plate or a stainless steel plate on the first insulating layer, the printing screen plate or the stainless steel plate including an eighth opening to expose the bulk material of the columnar electrode and the through hole;
filling the eighth opening and the through-hole with a solder paste;
removing the printing screen plate or the stainless steel plate; and
performing a reflow process on the solder paste to form the convex metal head on the top surface of the columnar electrode and to form the filling part in the through hole, wherein the convex metal head and the filling part constitute the solder ball.
3. The method of claim 1 , wherein forming the solder ball includes:
forming a second insulating layer on the re-wiring layer and on the exposed portion of first insulating layer, wherein the second insulating layer has a top surface lower than the top surface of the columnar electrode;
forming a fourth photoresist layer on the second insulating layer, the fourth photoresist layer including a sixth opening to expose the columnar electrode, an outer sidewall of the columnar electrode, and a first portion of the second insulating layer outside of the columnar electrode;
using the fourth photoresist layer and the bulk material of the columnar electrode as a mask to remove the first portion of the second insulating layer from the through hole and to remove a second portion of the second insulating layer on the outer sidewall of the columnar electrode to form an annular groove on the outer sidewall of the columnar electrode to expose a surface portion of the re-wiring layer;
removing the fourth photoresist layer;
placing a printing screen plate or a stainless steel plate on the second insulating layer, the printing screen plate or the stainless steel plate including a seventh opening to expose the bulk material of the columnar electrode, the through hole, and the annular groove;
filling the seventh opening, the through-hole, and the annular groove with a solder paste;
removing the printing screen plate or the stainless steel plate; and
performing a reflow process on the solder paste to form the convex metal head on the top surface of the columnar electrode, to form the filling part in the through hole, and to form a skirt-shaped part on the outer sidewall of the bulk material of the columnar electrode, wherein the convex metal head, the filling part, and the skirt-shaped part constitute the solder ball.