Epitaxial formation structures and associated methods of manufacturing solid state lighting devices

1. An integrated semiconductor device assembly for use in forming a solid state lighting (SSL) device, the assembly comprising:

a substrate comprising a composite ceramic material, the composite ceramic material having a composite coefficient of thermal expansion (CTE) temperature dependency over a temperature range from 800° C. to 1100° C.;

a formation structure on the substrate, the formation structure comprising at least one of Si(1,1,1) silicon, gallium nitride (GaN), silicon carbide (SiC), sapphire (Al 2 O 3 ), zinc oxide (ZnO 2 ), or gallium arsenide (GaAs); and

an SSL structure on the formation structure, the SSL structure having an SSL CTE temperature dependency over the temperature range, the SSL structure comprising

a first semiconductor material including P-type gallium nitride,

a second semiconductor material including N-type gallium nitride, and

an active region, between the first and second semiconductor materials, comprising indium gallium nitride,

wherein a difference between the composite CTE and SSL CTE temperature dependencies is below a target threshold of 0.3 ppm/° C. over the temperature range, and

wherein the composite ceramic material comprises polycrystalline aluminum nitride (AlN), yttrium oxide (Y 2 O 3 ) and hafnium carbide (HfC) sintered together.

2. The assembly of claim 1 wherein the target threshold is below 0.1 ppm/° C.

3. The assembly of claim 1 wherein:

the polycrystalline aluminum nitride comprises 0.4 to 0.7 by volume of the composite ceramic material, and

the yttrium oxide comprises 0.01 to 0.2 by volume of the composite ceramic material.