Textile Including Fibers Deposited with Material Using Atomic Layer Deposition for Increased Rigidity and Strength
Embodiments relate to depositing on one or more layers of materials on a fiber or fiber containing material using atomic layer deposition (ALD) to provide or enhance functionalities of the fibers or fiber containing material. Such functionalities include, for example, higher rigidity, higher strength, addition of resistance to bending, addition of resistance to impact or addition of resistance to tensile force of a fiber or fiber containing material. A layer of material is deposited coated on the fibers or the fiber containing material and then the surface of the material is oxidized, nitrified or carbonized to increase the volume of the material. By increasing the volume of the material, the material is subject to compressive stress. The compressive stress renders the fibers or the fiber containing material more rigid, stronger and more resistant against bending force, impact or tensile force.
1 . A textile comprising:
a plurality of fibers;
a layer of a first material deposited on a surface of each of the plurality of fibers using atomic layer deposition (ALD); and
a second material on at least a surface of the first material, the second material converted from the first material and having a larger volume compared to the first material, the larger volume introducing a compressive stress in the layer.
2 . The textile of claim 1 , wherein the first material comprises a polycrystalline material layer and the second material is obtained by oxidizing, nitrifying or carbonizing at least part of grain boundaries and a surface of the polycrystalline material.
3 . The textile of claim 2 , wherein the polycrystalline material layer comprises at least one of semiconductor, metal compound or metal.
4 . The textile of claim 2 , wherein the polycrystalline material layer comprises TiN.
5 . The textile of claim 2 , wherein the second material comprises TiON or TiCN.
6 . The textile of claim 2 , further comprising a layer of amorphous material deposited between the polycrystalline material and the plurality of fibers or on the surfaces of the second material using ALD.
7 . The textile of claim 6 , wherein the amorphous material layer comprises at least one of Al 2 O 3 or SiO 2 .
8 . The textile of claim 6 , wherein the amorphous material layer comprises SiN.
9 . The textile of claim 1 , wherein the plurality of fibers comprise carbon fibers.
10 . The textile of claim 1 , wherein the first material is deposited by injecting source precursor on each of the plurality of fibers and then depositing reactant precursor on each of the plurality of fibers.
11 . The textile of claim 10 , wherein the reactant precursor comprises radicals generated by exposing gas to plasma.
12 . The textile of claim 11 , further comprising an emissivity lowering layer deposited on each of the plurality of fibers using ALD, the emissivity lowering layer having emissivity lower than the treated layer.
13 . The textile of claim 11 , wherein the emissivity lowering layer comprises aluminum.
14 . The textile of claim 1 , wherein the second material comprises amorphous material.
15 . The textile of claim 14 , wherein the amorphous material comprises at least one of Al 2 O 3 and SiN.
16 . The textile of claim 1 , wherein the layer of the first material is deposited using ALD by causing a relative movement between the fibers and a source injector.
17 . The textile of claim 1 , wherein the second material comprises SiN.