Nanocomposite material, tunable resistor device, and method
Various embodiments of a composite material are provided. In one embodiment of the present invention a nanometer-scale composite material comprises, by volume, from about 1% to about 99% variable-conductivity material and from about 99% to about 1% conductive material. The composite material exhibits memristive properties when a voltage differential is applied to the nanocomposite. In another embodiment, a variable resistor device includes a first electrode terminal and a second electrode terminal and a nanocomposite in electrical communication with the electrode terminals. The composite material comprises, by volume, from about 1% to about 99% variable-conductivity material and from about 99% to about 1% conductive material. The memristor is tunable as the minimum instantaneous resistance can be altered several orders of magnitude by varying the composition and ratio of the variable-conductivity material and conductive material constituents of the composites.
1. A composite material comprising:
from about 1% to about 99% variable-conductivity material;
from about 99% to about 1% conductive material;
wherein the conductive material and variable-conductivity material comprise nanometer-scale particles having an average lineal dimension that ranges from about one nanometer to about one micron: and
wherein the composite material exhibits memristive properties when a voltage differential is applied to the composite material.
2. The composite material of claim 1 , Wherein the conductive material is a metal or a semiconductor material.
3. The composite material of claim 1 , wherein the conductive material is a doped semiconductor.
4. The composite material of claim 1 , wherein the variable-conductivity material is a solid ionic conductor material.
5. The composite material of claim 1 , wherein the variable-conductivity material is a metal oxide.
6. The composite material of claim 1 , wherein the composite material comprises, by volume, from about 10% to about 90% variable-conductivity material and from about 90% to about 10% conductive material.
7. The composite material of claim 1 , wherein the volumetric ratio of the variable-conductivity material to the conductive material ranges from about 35% :65% to about 70% :30%.
8. The composite material of claim 1 , wherein the conductive material is selected from the group of: gold, silver, silicon, germanium gallium arsenide, and mixtures thereof.
9. The composite material of claim 1 , wherein the variable conductivity material is a metal oxide selected from the group of nickel oxide, zinc oxide, titanium dioxide hafnium oxide, silicon oxide, vanadium oxide and mixtures thereof.
10. The composite material of claim 1 , wherein the variable-conductivity material is a solid ionic conductor material selected from the group of: silver iodide, copper iodide, lanthanum fluoride, silver fluoride, and combinations thereof.
11. The composite material of claim 1 , wherein the composite material comprise, by volume, from about 35% to about 65% silicon and from about 65% to about 35% nickel oxide.
12. The composite material of claim 1 , wherein the variable-conductivity material is nickel-oxide and the conductive material is silicon.
13. The composite material of claim 12 , wherein the volume ratio of nickel-oxide to silicon ranges from about 1% :99% to about 99% :1%.
14. The composite material of claim 12 , wherein the volume ratio of nickel-oxide to silicon ranges from about 35% :65% to about 75% :25%.
15. The composite material of claim 1 , wherein the composite material has a minimum resistance that ranges from about 1 kΩto about 5 GΩwhen a voltage differential that ranges from zero to 10 Volts is applied to the composite material.
16. A variable resistor device comprising:
a composite material comprising a nanometer-scale conductive material and nanometer-scale variable-conductive material;
a first electrode connected to the composite material and a second electrode connected to the composite material; and
wherein the variable resistor device exhibits memristive properties in response to voltage applied across the first electrode and the second electrode.
17. The variable resistor device of claim 16 , wherein the nanometer-scale conductive material and the nanometer-scale variable-conductive material comprise particles having an average diameter that ranges from about one nanometer to about one micron.
18. The variable resistor device of claim 16 , wherein the variable-conductivity material of the composite comprises metal oxide.
19. The variable resistor device of claim 16 , wherein the conductive material of the composite comprises semiconductor material.
20. The composite material of claim 16 , wherein the variable-conductivity material of the composite comprises a solid ionic conductor material.
21. The variable resistor device of claim 16 , wherein the volumetric ratio of the variable-conductivity material to the conductive material ranges from about 1% :99% to about 99% :1%.
22. The variable resistor device of claim 16 , wherein the volumetric ratio of the variable-conductivity material to the conductive material ranges from about 35% :65% to about 75% :25%.
23. The variable resistor device of claim 16 , wherein the conductive material is selected from the group of: gold, silver, silicon, germanium, gallium arsenide, and mixtures thereof.
24. The variable resistor device of claim 18 , wherein the metal oxide material is selected from the group of: nickel oxide, zinc oxide, titanium dioxide, hafnium oxide, silicon oxide, vanadium oxide and mixtures thereof.
25. The variable resistor device of claim 16 , wherein the composite material comprises, by volume, from about 25% to about 75% nickel-oxide and from about 75% to about 25% silicon.
26. The variable resistor device of claim 16 , wherein the composite material is a film structure.
27. The variable resistor device of claim 26 , wherein the conductive material is present in the film as a host material having defined pores, and the variable-conductivity material is present as an intercalating material disposed within the pores.
28. A method for making a composite comprising:
hybridizing a nanometer-scale conductive material with a nanometer-scale variable-conductivity material to form a composite material comprising, by volume, from about 1% to about 99% variable-conductivity material and from about 99% to about 1% conductive material.
29. The method of claim 28 , wherein the ratio, by volume, of variable-conductivity material to conductive material ranges from about 25% :75% to about 75% :25%.
30. The method of claim 28 , wherein hybridizing comprises:
forming the conductive material into a film structure having pores therein; and
fining the pores of the film structure with particles of the variable-conductive material via at least one of the following techniques: sol-gel deposition, thermal deposition, and electron beam deposition.
31. The method of claim 28 , further comprising:
fabricating a first electrode and a second electrode on the composite via photolithography; and
wherein the first electrode and the second electrode comprise a material selected from the group of: gold, silver, platinum, nickel, aluminum and mixtures thereof.
32. The method of claim 28 , wherein:
the conductive material is selected from the group of: gold, silver, silicon, germanium, gallium, arsenide, and mixtures thereof; and
the variable-conductivity material is selected from the group of: nickel oxide, zinc oxide, titanium dioxide, hafnium oxide, silicon oxide, vanadium oxide, silver iodide, copper iodide, lanthanum fluoride, silver fluoride and mixtures thereof.