Organic light-emitting display device and method of manufacturing the same
Provided is an organic light-emitting display device that includes: a substrate; a first wiring that extends in a first direction on the substrate and comprises first and second portions with an opening therebetween; a second wiring that overlaps with the opening and extends in a second direction that crosses the first direction; an insulating film that covers the first wiring and the second wiring and comprises a first contact hole that exposes the first portion of the first wiring and a second contact hole that exposes the second portion; and a bridge electrode that is formed on the insulating film, is electrically connected to the first and second portions through the first and second contact holes, and comprises a transparent conductive oxide and a metal.
1. An organic light-emitting display device comprising:
a substrate;
a first wiring that extends in a first direction on the substrate, and comprises first and second portions with an opening therebetween, the opening being entirely filled by a first insulating film;
a second wiring that overlaps with the opening and extends in a second direction that crosses the first direction;
a second insulating film that covers the first wiring and the second wiring, the second insulating film comprising
a first contact hole that exposes the first portion of the first wiring and
a second contact hole that exposes the second portion; and
a bridge electrode that is formed on the second insulating film, is electrically connected to the first and second portions through the first and second contact holes, respectively, and comprises a transparent conductive oxide and a metal, and wherein a distance between the substrate and the first wiring is shorter than a distance between the substrate and the second wiring.
2. The organic light-emitting display device of claim 1 , further comprising a thin film transistor (TFT) that comprises
a gate electrode formed on the substrate,
an active layer insulated from the gate electrode,
a source electrode and a drain electrode formed on the active layer,
the first wiring formed at a same level as the gate electrode,
the second wiring formed at a same level as the source electrode and the drain electrode.
3. The organic light-emitting display device of claim 2 , the active layer comprising a semiconductive oxide.
4. The organic light-emitting display device of claim 2 , further comprising
a pixel electrode formed on the second insulating film and connected to the TFT,
an intermediate layer formed on the pixel electrode, and
a facing electrode formed on the intermediate layer.
5. The organic light-emitting display device of claim 4 , further comprising a bus line comprised of same material of the bridge electrode, formed at a same level as the bridge electrode, and connected to the facing electrode.
6. The organic light-emitting display device of claim 4 , the organic light-emitting device emitting light from the intermediate layer towards the facing electrode.
7. The organic light-emitting display device of claim 1 , further comprising a TFT that comprises
a gate electrode formed on the substrate,
an active layer insulated from the gate electrode,
a source electrode and a drain electrode formed on the active layer,
the first wiring formed at a same level as the source electrode and the drain electrode, and
the second wiring formed at a same level as the gate electrode.
8. The organic light-emitting display device of claim 1 , the bridge electrode comprising:
a first layer comprising indium tin oxide (ITO),
a second layer comprising silver (Ag), and
a third layer comprising ITO.