Generating guiding patterns for directed self-assembly
View Patent ↗Aspects of the invention relate to techniques of generating guiding patterns for via-type feature groups. A guiding pattern may be constructed for a via-type feature group that comprises two or more via-type features in a layout design. A backbone structure may then be determined for the guiding pattern. Based on the backbone structure and a self-assembly model, simulated locations of the two or more via-type features are computed. The simulated locations are compared with targeted locations. If the simulated locations do not match the targeted locations based on a predetermined criterion, the simulated locations adjusted to derive modified locations. Using the modified locations, the above operations may be repeated until the simulated locations match the targeted location based on a predetermined criterion or for a predetermined number of times.
1. One or more processor-readable storage device storing computer-executable instructions for causing one or more processors to perform a method, the method comprising:
receiving information of a via-type feature group, the via-type feature group comprising two or more via-type features in a layout design, the information comprising targeted locations of the two or more via-type features;
constructing a guiding pattern for the via-type feature group based on the targeted locations of the two or more via-type features;
determining a backbone structure for the guiding pattern;
computing simulated locations of the two or more via-type features based on the backbone structure and a self-assembly model; and
comparing the simulated locations with the targeted locations.
2. The one or more processor-readable storage device recited in claim 1 , wherein the method further comprises:
A: adjusting the simulated locations to derive modified locations if the simulated locations do not match the targeted locations based on a predetermined criterion;
B: constructing a new guiding pattern for the via-type feature group based on the modified locations and the shapes of the two or more via-type features and the block copolymer area ratio information;
C: determining a new backbone structure for the new guiding pattern;
D: computing new simulated locations of the two or more via-type features based on the new backbone structure and the self-assembly model; and
E: comparing the new simulated locations with the targeted locations.
3. The one or more processor-readable storage device recited in claim 2 , wherein the method further comprises:
repeating A, B, C, D and E until the new simulated locations match the targeted location based on a predetermined criterion or for a predetermined number of times.
4. The one or more processor-readable storage device recited in claim 1 , wherein the two or more via-type features are grouped together based on at least distances between neighboring via-type features of the two or more via-type features.
5. The one or more processor-readable storage device recited in claim 1 , wherein the via-type feature group is DSA(Directed-Self-Assembly)-compliant.
6. The one or more processor-readable storage device recited in claim 5 , wherein the DSA(Directed-Self-Assembly)-compliant determination is based on distorted areas, a distorted area being an area not covered or covered twice by DSA shells of two neighboring via-type features.
7. The one or more processor-readable storage device recited in claim 1 , wherein the constructing is further based on area ratio information of a di-block copolymer.
8. The one or more processor-readable storage device recited in claim 1 , wherein the self-assembly model is based on elastic potential energy.
9. The one or more processor-readable storage device recited in claim 1 , wherein the determining comprises determining back-bone coordinates for the guiding pattern.
10. A method, executed by at least one processor of a computer, comprising:
receiving information of a via-type feature group, the via-type feature group comprising two or more via-type features in a layout design, the information comprising targeted locations of the two or more via-type features;
constructing a guiding pattern for the via-type feature group based on the targeted locations of the two or more via-type features;
determining a backbone structure for the guiding pattern;
computing simulated locations of the two or more via-type features based on the backbone structure and a self-assembly model; and
comparing the simulated locations with the targeted locations.
11. The method recited in claim 10 , further comprising:
A: adjusting the simulated locations to derive modified locations if the simulated locations do not match the targeted locations based on a predetermined criterion;
B: constructing a new guiding pattern for the via-type feature group based on the modified locations and the shapes of the two or more via-type features and the block copolymer area ratio information;
C: determining a new backbone structure for the new guiding pattern;
D: computing new simulated locations of the two or more via-type features based on the new backbone structure and the self-assembly model; and
E: comparing the new simulated locations with the targeted locations.
12. The method recited in claim 11 , further comprising:
repeating A, B, C, D and E until the new simulated locations match the targeted location based on a predetermined criterion or for a predetermined number of times.
13. The method recited in claim 10 , wherein the two or more via-type features are grouped together based on at least distances between neighboring via-type features of the two or more via-type features.
14. The method recited in claim 10 , wherein the via-type feature group is DSA(Directed-Self-Assembly)-compliant.
15. The method recited in claim 14 , wherein the DSA(Directed-Self-Assembly)-compliant determination is based on distorted areas, a distorted area being an area not covered or covered twice by DSA shells of two neighboring via-type features.
16. The method recited in claim 10 , wherein the constructing is further based on area ratio information of a di-block copolymer.
17. The method recited in claim 10 , wherein the self-assembly model is based on elastic potential energy.
18. The method recited in claim 10 , wherein the determining comprises determining back-bone coordinates for the guiding pattern.
19. A system comprising:
one or more processors, the one or more processors programmed to perform a method, the method comprising:
receiving information of a via-type feature group, the via-type feature group comprising two or more via-type features in a layout design, the information comprising targeted locations of the two or more via-type features;
constructing a guiding pattern for the via-type feature group based on the targeted locations of the two or more via-type features;
determining a backbone structure for the guiding pattern;
computing simulated locations of the two or more via-type features based on the backbone structure and a self-assembly model; and
comparing the simulated locations with the targeted locations.
20. The system recited in claim 19 , wherein the method further comprises:
A: adjusting the simulated locations to derive modified locations if the simulated locations do not match the targeted locations based on a predetermined criterion;
B: constructing a new guiding pattern for the via-type feature group based on the modified locations and the shapes of the two or more via-type features and the block copolymer area ratio information;
C: determining a new backbone structure for the new guiding pattern;
D: computing new simulated locations of the two or more via-type features based on the new backbone structure and the self-assembly model; and
E: comparing the new simulated locations with the targeted locations.