Techniques for providing a direct injection semiconductor memory device
Techniques for providing a direct injection semiconductor memory device are disclosed. In one embodiment, the techniques may be realized as a method for biasing a direct injection semiconductor memory device including the steps of applying a first non-negative voltage potential to a first region via a bit line and applying a second non-negative voltage potential to a second region via a source line. The method may also include applying a third voltage potential to a word line, wherein the word line may be spaced apart from and capacitively to a body region that may be electrically floating and disposed between the first region and the second region. The method may further include applying a fourth positive voltage potential to a third region via a carrier injection line, wherein the third region may be disposed below at least one of the first region, the body region, and the second region.
1. A semiconductor memory device comprising:
a memory cell comprising:
a first region coupled to a bit line;
a second region coupled to a source line;
a body region spaced apart from and capacitively coupled to a word line, wherein the body region is electrically floating and disposed between and directly adjacent to the first region and the second region; and
a third region coupled to a carrier injection line, wherein the third region is disposed directly adjacent to the second region and configured to inject charges into the body region through the second region, wherein the third region is disposed on a substrate, and wherein the second region, the body region, and the first region are contiguously stacked on the third region opposite the substrate and in a direction substantially perpendicular to a plane of the substrate;
data write and sense circuitry that biases the memory cell during a hold operation by applying a first non-negative voltage potential to the first region via the bit line; and
memory cell selection and control circuitry that biases the memory cell during the hold operation by applying a second non-negative voltage potential to the second region via the source line, applying a third voltage potential to the word line, and applying a fourth positive voltage potential to the third region via the carrier injection line, wherein the hold operation maintains a data state stored in the memory cell.
2. The semiconductor memory device of claim 1 , wherein the memory cell selection and control circuitry increases the third voltage potential applied to the word line from a value applied to the word line during the hold operation to a value applied to perform a read operation.
3. The semiconductor memory device of claim 2 , wherein the memory cell selection and control circuitry increases the second non-negative voltage potential applied to the second region from a value applied during the hold operation to a value applied to perform the read operation.
4. The semiconductor memory device of claim 2 , wherein the data write and sense circuitry increases the first non-negative voltage potential applied to the first region from a value applied during the hold operation to a value applied to reduce a disturbance during the read operation.
5. The semiconductor memory device of claim 1 , wherein the memory cell selection and control circuitry increases the second non-negative voltage potential applied to the second region from a value applied during the hold operation to a value applied to perform a preparation to start operation.
6. The semiconductor memory device of claim 1 , wherein the memory cell selection and control circuitry decreases the second non-negative voltage potential applied to the second region from a value applied during the hold operation to a value applied to perform a write logic high operation.
7. The semiconductor memory device of claim 6 , wherein the memory cell selection and control circuitry increases the third voltage potential applied to the word line from a value applied during the hold operation to a value applied to perform the write logic high operation.
8. The semiconductor memory device of claim 6 , wherein the data write and sense circuitry maintains the first non-negative voltage potential applied to the first region at a value that is applied to perform both the hold operation and the write logic high operation.
9. The semiconductor memory device of claim 1 , wherein the memory cell selection and control circuitry increases the third voltage potential applied to the word line from a value applied during the hold operation to a value applied to perform a write logic low operation.
10. The semiconductor memory device of claim 9 , wherein the memory cell selection and control circuitry increases the second non-negative voltage potential applied to the second region from a value applied during the hold operation to a value applied to perform the write logic low operation.
11. The semiconductor memory device of claim 9 , wherein the data write and sense circuitry maintains the first non-negative voltage potential applied to the first region at a value that is applied to perform both the hold operation and the write logic low operation.
12. The semiconductor memory device of claim 9 , wherein the data write and sense circuitry increases the first non-negative voltage potential applied to the first region during the write logic low operation from a value applied during the hold operation to maintain a logic high stored in the memory cell.
13. A semiconductor memory device comprising:
a first region coupled to a bit line;
a second region coupled to a source line;
a body region spaced apart from and capacitively coupled to a word line, wherein the body region is electrically floating and disposed between and directly adjacent to the first region and the second region;
a third region coupled to a carrier injection line, wherein the third region is disposed directly adjacent to the second region and configured to inject charges into the body region through the second region, wherein the third region is disposed on a substrate, and wherein the second region, the body region, and the first region are contiguously stacked on the third region opposite the substrate and in a direction substantially perpendicular to a plane of the substrate; and
circuitry for biasing the semiconductor memory device during a hold operation by applying a first non-negative voltage potential to the first region via the bit line, applying a second non-negative voltage potential to the second region via the source line, applying a third voltage potential to the word line, and applying a fourth positive voltage potential to the third region via the carrier injection line, wherein the hold operation maintains a data state stored in the semiconductor memory device.
14. The semiconductor memory device of claim 13 , wherein the third voltage potential applied to the word line is increased from a value applied during the hold operation to a value applied to perform a read operation.
15. The semiconductor memory device of claim 14 , wherein the second voltage potential applied to the second region is increased from a value applied during the hold operation to a value applied to perform the read operation.
16. The semiconductor memory device of claim 14 , wherein the first voltage potential applied to the first region is decreased from a value applied during the hold operation to a value applied to perform the read operation.
17. The semiconductor memory device of claim 13 , wherein the first voltage potential applied to the first region is decreased from a value applied during the hold operation to a value applied to perform a preparation to start operation.
18. The semiconductor memory device of claim 17 , wherein the second voltage potential applied to the second region is increased from a value applied during the hold operation to a value applied to perform the preparation to start operation.
19. The semiconductor memory device of claim 13 , wherein the second voltage potential applied to the second region is decreased from a value applied during the hold operation to a value applied to perform a write logic high operation.
20. The semiconductor memory device of claim 19 , wherein the third voltage potential applied to the word line is increased from a value applied during the hold operation to a value applied to perform the write logic high operation.
21. The semiconductor memory device of claim 19 , wherein the first voltage potential applied to the first region is increased from a value applied during a read operation to a value applied to perform the write logic high operation.
22. The semiconductor memory device of claim 13 , wherein the third voltage potential applied to the word line is increased from a value applied during the hold operation to a value applied to perform a write logic low operation.
23. The semiconductor memory device of claim 22 , wherein the second voltage potential applied to the second region is increased from a value applied during the hold operation to a value applied to perform the write logic low operation.
24. The semiconductor memory device of claim 22 , wherein the first voltage potential applied to the first region is decreased from a value applied during the hold operation to a value applied to perform the write logic low operation.
25. The semiconductor memory device of claim 22 , wherein the first non-negative voltage potential applied to the first region is increased from a value applied during the hold operation to maintain a logic high stored in the memory cell.
26. The semiconductor memory device of claim 1 , wherein the body region is spaced apart from and capacitively coupled to the word line via a dielectric material.
27. The semiconductor memory device of claim 13 , wherein the body region is spaced apart from and capacitively coupled to the word line via a dielectric material.