High rectifying ratio diode

1. A device comprising:

a substrate having isolation regions;

a selector diode disposed on the substrate, wherein the diode comprises

first and second diode terminals which are in direct contact with each other, the first diode terminal is disposed between the second diode terminal and the substrate, wherein the first diode terminal comprises a semiconductor material and the second diode terminal comprises a metal silicide layer, and

a Schottky Barrier (SB) disposed at about an interface of the first and second terminals, wherein the SB comprises a tunable SB height (SBH) between the metal silicide layer of the second terminal and the semiconductor material of the first terminal which are in direct contact with each other for a desired rectifying ratio defined by a SB region having segregated dopants, wherein the segregated dopants include a dopant type which increases the SBH;

a first conductor disposed in the substrate and directly below the first diode terminal, wherein the first conductor includes a doped region extending to a depth greater than a bottom of the isolation regions; and

a memory element disposed over the selector diode, wherein the memory element is directly coupled to the second diode terminal.

2. The device of claim 1 wherein the first diode terminal and the first conductor are defined by heavily doped regions having first polarity type dopants.

3. The device of claim 2 wherein:

the segregated dopants comprise liker type dopants, wherein the liker type dopants include a charge which is opposite to a charge of the first polarity type dopants of the first diode terminal; and

wherein the tunable SBH is increased by increasing a concentration of the liker type dopants.

4. The device of claim 3 wherein:

the first polarity type dopants are n-type;

the first diode terminal is a cathode terminal; and

the second diode terminal is an anode terminal.

5. The device of claim 4 wherein the concentration of the liker type dopants increases the SBH from an initial rectifying ratio to produce a final rectifying ratio greater than 10 6 .

6. The device of claim 4 wherein the second liker type dopants comprise C, Al, In or a combination thereof.

7. The device of claim 3 wherein:

the first polarity type dopants are p-type;

the first diode terminal is an anode terminal; and

the second diode terminal is a cathode terminal.

8. The device of claim 7 wherein the concentration of the liker type dopants produces a rectifying ratio greater than 10 6 .

9. The device of claim 7 wherein the liker type dopants comprise F, S, Cl, Se or a combination thereof.

10. The device of claim 2 comprising:

an isolation well having second polarity type dopants disposed in between the substrate and the first diode terminal.

11. The device of claim 1 wherein the memory element comprises a resistive random access memory (RRAM).

12. The device in claim 1 further comprising:

a second conductor, wherein the second conductor is a metal layer disposed over the memory element; and

a conductor plug which couples the second conductor to the memory element.

13. A device comprising:

a substrate;

a selector diode disposed on the substrate, wherein the diode comprises

first and second diode terminals which are in direct contact with each other, the first diode terminal is disposed between the second diode terminal and the substrate, wherein the first diode terminal comprises a semiconductor material heavily doped with first polarity type dopants and the second diode terminal comprises a metal silicide layer, and

a Schottky Barrier (SB) disposed at about an interface of the first and second terminals, wherein the SB comprises a tunable SB height (SBH) between the metal silicide layer of the second diode terminal and the semiconductor material of the first diode terminal which are in direct contact with each other for a desired rectifying ratio defined by a SB region having segregated dopants, wherein the SB region comprises a concentration of second liker type dopants, and wherein the second liker type dopant has a charge which is opposite of the dopants of the first diode terminal which increases the SBH to achieve the desired rectifying ratio; and

an isolation well disposed between the substrate and the first diode terminal, wherein the isolation well includes second polarity type dopants and the first diode terminal includes first polarity type dopants opposite to the second polarity type.

14. The device of claim 13 comprising a memory element disposed over and coupled to the selector diode, wherein the memory element comprises a programmable resistive layer which is in direct contact with the metal silicide layer.

15. The device of claim 14 comprising first and second conductors, wherein the first conductor is disposed in the substrate directly below the first diode terminal, wherein the second conductor is disposed over the substrate and in communication with the memory element.

16. A device comprising:

a substrate having isolation regions;

a selector diode disposed on the substrate, wherein the diode comprises first and second terminals which are in direct contact with each other, wherein

the first diode terminal is disposed between the second diode terminal and the substrate, the first diode terminal comprises a semiconductor material heavily doped with first polarity type dopants disposed within the substrate,

the second diode terminal comprises a metal silicide layer disposed on a top substrate surface, and

a Schottky Barrier (SB) is disposed at about an interface of the first and second diode terminals, wherein the SB comprises a tunable SB height (SBH) between the metal silicide layer of the second terminal and the semiconductor material of the first terminal which are in direct contact with each other for a desired rectifying ratio defined by a SB region having segregated dopants;

a memory element disposed over and coupled to the selector diode; and

first and second conductors, wherein the first conductor is a buried first well disposed in the substrate having a depth greater than a bottom of the isolation regions and is disposed below the first diode terminal and the second conductor is a conductor layer disposed over the memory element.

17. The device of claim 16 wherein:

the segregated dopants comprise a first or second liker dopant type, wherein the first liker dopant type has a charge which is the same as that of the dopants of the first diode terminal and the second liker dopant type has a charge which is opposite of the dopants of the first diode terminal; and

the first liker dopant type decreases the SBH and the second liker dopant type increases the SBH.

18. The device of claim 17 wherein:

the first polarity type dopants are n-type;

the first diode terminal is a cathode terminal; and

the second diode terminal is an anode terminal.

19. The device of claim 17 wherein:

the first polarity type dopants are p-type;

the first diode terminal is an anode terminal; and

the second diode terminal is a cathode terminal.

20. The device of claim 19 comprising an isolation well disposed between the first diode terminal and the substrate, wherein the isolation well includes opposite polarity type dopants from the first diode terminal.

21. The device of claim 16 wherein the SB region comprises a concentration of second liker type dopants, and wherein the second liker type dopant has a charge which is opposite of the dopants of the first terminal which increases the SBH to achieve the desired rectifying ratio.

22. The device of claim 21 comprising a conductor plug which couples the second conductor to the memory element.