Semiconductor device having a fuse element
A portion-to-be-melted of a fuse is surrounded by plates, so that heat to be generated in a meltdown portion of the fuse under current supply can be confined or accumulated in the vicinity of the meltdown portion of the fuse. This makes it possible to facilitate meltdown of the fuse. The meltdown portion of the fuse in a folded form, rather than in a single here a fuse composed of a straight-line form, is more successful in readily concentrating the heat generated in the fuse under current supply into the meltdown portion, and in further facilitating the meltdown of the fuse.
1. A semiconductor device, comprising:
a substrate;
an insulating layer formed over the substrate;
a first conductive plate formed in the insulating layer and formed at a first wiring layer;
a fuse element formed in the insulating layer and formed at a second wiring layer, the second wiring layer being one level above the first wiring layer;
a second conductive plate formed over the insulating layer and formed at a third wiring layer which is one level upper than the second wiring layer;
a third conductive plate formed in the insulating layer and formed at the second wiring layer; and
a fourth conductive plate formed in the insulating layer and formed at the second wiring layer,
wherein the fuse element includes copper,
wherein the fuse element is brought into a blow state by a current supplied thereto,
wherein the fuse element has a first portion including a meltdown portion,
wherein the first conductive plate is formed below the fuse element in a planar view,
wherein the second conductive plate is formed above the fuse element in the planar view,
wherein the first portion, the third conductive plate, and the fourth conductive plate extend in a first direction of the planar view, and
wherein the first portion is located between the third conductive plate and the fourth conductive plate in a second direction of the planar view perpendicular to the first direction.
2. A semiconductor device according to claim 1 ,
wherein the fuse element has a second portion located at an end of the first portion in the first direction, and
wherein a width of the first portion in the second direction is smaller than a width of the second portion in the second direction.
3. A semiconductor device according to claim 2 ,
wherein a part of the third conductive plate is located in the second direction when seen from the second portion.
4. A semiconductor device according to claim 3 , wherein,
the third conductive plate extends in the first direction spaced apart from the first portion at a first distance, and
the third conductive plate extends in the first direction spaced apart from the second portion at a second distance, the first distance being greater than the second distance.
5. A semiconductor device according to claim 1 ,
wherein, in the second wiring layer, there are no wiring between the fuse element and the third conductive plate, and there are no wiring between the fuse element and the fourth conductive plate.
6. A semiconductor device according to claim 1 ,
wherein, in planar view, there are no wiring between the fuse element and the first conductive plate, and there are no wiring between the fuse element and the second conductive plate.
7. A semiconductor device according to claim 1 ,
wherein the first conductive plate, the second conductive plate, the third conductive plate, and the fourth conductive plate each include copper.
8. A semiconductor device according to claim 1 ,
wherein the fuse element has a second portion located at an end of the first portion in the first direction with a first end edge of the second portion, running in the second direction, joining to a terminal end of the first portion,
wherein a width of the first portion in the second direction is smaller than a width of the second portion in the second direction, and
wherein the third conductive plate extends in the first direction adjacent the first portion and the second portion beyond the first edge of the second portion.
9. A semiconductor device according to claim 8 , wherein,
the second portion has a second end edge extending in the second direction, and
the third conductive plate extends in the first direction adjacent the second portion and terminates, at a distal end edge, before the second end edge of the second portion.
10. A semiconductor device according to claim 9 , wherein,
the third conductive plate extends in the first direction spaced apart from the first portion, in the second direction, at a first distance, and
the third conductive plate extends in the first direction spaced apart from the second portion, in the second direction, at a second distance, the first distance being greater than the second distance.
11. A semiconductor device according to claim 1 ,
wherein the fuse element has a second portion located at an end of the first portion in the first direction with a first end edge of the second portion, extending in the second direction, joining to a terminal end of the first portion,
wherein a width of the first portion in the second direction is smaller than a width of the second portion in the second direction,
wherein the third conductive plate extends in the first direction adjacent to the first portion and the second portion at least to the first end edge of the second portion, and
wherein the third conductive plate is spaced apart, in the second direction, from the first and second portions.
12. A semiconductor device according to claim 11 , wherein,
the third conductive plate extends in the first direction spaced apart from the first portion at a first distance, and
the third conductive plate extends in the first direction spaced apart from the second portion at a second distance, the first distance being greater than the second distance.