Substrate-to-carrier adhesion without mechanical adhesion between abutting surfaces thereof

1. A method, comprising:

placing a substrate on a top surface of a support platform;

wherein a bottom surface of the substrate abuts the top surface of the support platform after placement without adhesive between the bottom surface and the top surface;

depositing a material over and around the substrate and on the top surface of the support platform;

wherein the material is in contact with a side surface of the substrate to completely seal an interface as between the bottom surface of the substrate and the top surface of the support platform to retain abutment of the top surface and the bottom surface without adhesive therebetween;

removing an upper portion of the material;

thinning the substrate including removing more of the material;

back-end-of-line processing the substrate including forming one or more inter-level dielectrics and one or more levels of metallization; and

dicing the substrate to provide dies.

2. The method according to claim 1 , further comprising:

placing a membrane on the top surface of the support platform prior to placement of the substrate;

wherein the bottom surface of the substrate abuts the membrane which abuts the top surface of the support platform.

3. The method according to claim 1 , wherein:

the support platform includes a raised step along the top surface;

the material is disposed around the substrate, on the top surface of the support platform and underneath a perimeter edge portion of the bottom surface of the substrate that extends out from a portion of the top surface associated with the raised step;

the material is in contact with the side surface of the substrate and the perimeter edge portion of the bottom surface of the substrate to completely seal the interface as between the bottom surface of the substrate and the portion of the top surface of the support platform associated with the raised step to retain abutment of the top surface and the bottom surface.

4. The method according to claim 1 , wherein maximum thickness of the material in a vertical direction orthogonal to the top surface is equivalent to thickness of the substrate.

5. The method according to claim 4 , wherein the material is an encapsulation material.

6. The method according to claim 4 , wherein thickness of the support platform is more than twice that of a final thickness of the substrate.

7. The method according to claim 4 , wherein:

the substrate is a bare wafer when placed on the top surface of the support platform; and

the bottom surface of the bare wafer is a backside surface.

8. The method according to claim 4 , wherein:

the substrate is a wafer having had the back-end-of-line processing prior to placement on the top surface of the support platform; and

the bottom surface of the wafer is a front side surface.