IP Library Granted Patent US 9,748,918
Granted Patent B2
US 9,748,918 · App. 14/092,793 · Granted Aug 29, 2017

Acoustic resonator comprising integrated structures for improved performance

Inventors: Dariusz Burak (Fort Collins, CO); John Choy (Westminster, CO); Phil Nikkel (Loveland, CO); Kevin J. Grannen (Thornton, CO)
Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
H03H9/02102H03H9/02118H03H9/132H03H9/173
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Quick Facts
Patent No.
US 9,748,918
App. No.
14/092,793
Granted
Aug 29, 2017
Kind
B2
Abstract

An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and an air cavity disposed in the substrate below at least a portion of a main membrane region defined by an overlap between the first electrode. The acoustic resonator structure may further comprise various integrated structures at or around the main membrane region to improve its electrical performance.

Claims (40)

1. An acoustic resonator structure comprising:

a first electrode disposed on a substrate;

a piezoelectric layer disposed on the first electrode;

a second electrode disposed on the piezoelectric layer;

a frame disposed within a main membrane region defined by an overlap between the first electrode, the piezoelectric layer, and the second electrode, and having an outer edge substantially aligned with a boundary of the main membrane region;

a collar formed separate from the frame, disposed outside the main membrane region, and having an inner edge substantially aligned with the boundary of or overlapping the main membrane region;

a temperature compensation feature having a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer, the first electrode, and the second electrode; and

a planarization layer disposed on the piezoelectric layer adjacent to the second electrode, wherein the collar is disposed on the planarization layer and the second electrode.

2. The acoustic resonator structure of claim 1 , wherein the frame is disposed at a bottom portion of the second electrode.

3. The acoustic resonator structure of claim 1 , wherein the piezoelectric layer is doped with at least one rare earth element for offsetting at least a portion of degradation of an electromechanical coupling coefficient of the acoustic resonator structure caused by the temperature compensation feature having the positive temperature coefficient.

4. The acoustic resonator structure of claim 1 , wherein the temperature compensation feature comprises a temperature compensation layer embedded in the first electrode.

5. The acoustic resonator structure of claim 1 , wherein the temperature compensation feature comprises a temperature compensation layer embedded in the second electrode.

6. The acoustic resonator structure of claim 1 , wherein the temperature compensation feature comprises a temperature compensation layer embedded in the piezoelectric layer.

7. An acoustic resonator structure comprising:

a first electrode disposed on a substrate;

a piezoelectric layer disposed on the first electrode;

a second electrode disposed on the piezoelectric layer;

a frame disposed within a main membrane region defined by an overlap between the first electrode, the piezoelectric layer, and the second electrode, and having an outer edge substantially aligned with a boundary of the main membrane region;

a collar formed separate from the frame, disposed outside the main membrane region, and having an inner edge substantially aligned with the boundary of or overlapping the main membrane region; and

a temperature compensation feature having a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer, the first electrode, and the second electrode, wherein

the frame is disposed at a bottom portion of the second electrode.

8. The acoustic resonator structure of claim 7 , further comprising a planarization layer disposed on the piezoelectric layer adjacent to the second electrode, wherein the collar is disposed on the planarization layer and the second electrode.

9. The acoustic resonator structure of claim 7 , wherein the collar is disposed between the first electrode and the piezoelectric layer.

10. The acoustic resonator structure of claim 7 , wherein the collar is disposed between the first electrode and the substrate.

11. The acoustic resonator structure of claim 7 , wherein the piezoelectric layer is doped with at least one rare earth element for offsetting at least a portion of degradation of an electromechanical coupling coefficient of the acoustic resonator structure caused by the temperature compensation feature having the positive temperature coefficient.

12. The acoustic resonator structure of claim 7 , wherein the temperature compensation feature comprises a temperature compensation layer embedded in the first electrode.

13. The acoustic resonator structure of claim 7 , wherein the temperature compensation feature comprises a temperature compensation layer embedded in the piezoelectric layer.

14. An acoustic resonator structure comprising:

a first electrode disposed on a substrate;

a piezoelectric layer disposed on the first electrode;

a second electrode disposed on the piezoelectric layer;

a frame disposed within a main membrane region defined by an overlap between the first electrode, the piezoelectric layer, and the second electrode, and having an outer edge substantially aligned with a boundary of the main membrane region;

a collar formed separate from the frame, disposed outside the main membrane region, and having an inner edge substantially aligned with the boundary of or overlapping the main membrane region; and

a temperature compensation feature having a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer, the first electrode, and the second electrode, wherein

the frame is disposed at a bottom portion of the first electrode.

15. The acoustic resonator structure of claim 14 , wherein the temperature compensation feature comprises a temperature compensation layer embedded in the second electrode.

16. The acoustic resonator structure of claim 14 , further comprising a planarization layer disposed on the piezoelectric layer adjacent to the second electrode, wherein the collar is disposed on the planarization layer and the second electrode.

17. The acoustic resonator structure of claim 14 , wherein the collar is disposed between the first electrode and the piezoelectric layer.

18. The acoustic resonator structure of claim 14 , wherein the collar is disposed between the first electrode and the substrate.

19. The acoustic resonator structure of claim 14 , wherein the piezoelectric layer is doped with at least one rare earth element for offsetting at least a portion of degradation of an electromechanical coupling coefficient of the acoustic resonator structure caused by the temperature compensation feature having the positive temperature coefficient.

Assignments (7)
CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE PREVIOUSLY RECORDED AT REEL: 047422 FRAME: 0464. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Mar 6, 2019
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 048883/0702 →
MERGER Recorded Oct 5, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047422/0464 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041710/0001 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037808/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032851-0001) Recorded Feb 2, 2016
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 037689/0001 →
PATENT SECURITY AGREEMENT Recorded May 8, 2014
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 032851/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 3, 2013
From: BURAK, DARIUSZ; CHOY, JOHN; NIKKEL, PHIL; GRANNEN, KEVIN J.
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 031753/0638 →
Continuity (3)
Continuation In Part 13955774 · Jul 31, 2013
Continuation In Part 13766993 · Feb 14, 2013
Related Publication 20140225683A1 · Aug 14, 2014