Solid-state image pickup device, and camera module

1. A solid-state image pickup device comprising:

a pixel array that comprises a two-dimensionally arranged matrix of photoelectric conversion elements corresponding to pixels of a picked-up image,

each of the photoelectric conversion elements including a first conductive semiconductor region and a second conductive semiconductor region between which an uneven junction plane is formed,

wherein the second conductive semiconductor region includes:

a first second-conductive region that is provided on a surface of a side which light enters in the first conductive semiconductor region; and

a second second-conductive region that protrudes toward the first conductive semiconductor region from a junction plane between the first second-conductive region and the first conductive semiconductor region.

2. The solid-state image pickup device according to claim 1 , wherein the junction plane has a dotted convex portion.

3. The solid-state image pickup device according to claim 1 , wherein the first conductive semiconductor region includes:

a first first-conductive region that is provided on a semiconductor substrate; and

a second first-conductive region that protrudes toward the semiconductor substrate from a junction plane between the first first-conductive region and the semiconductor substrate.

4. The solid-state image pickup device according to claim 1 , further comprising:

a second conductive semiconductor region provided inside the first conductive semiconductor region.

5. The solid-state image pickup device according to claim 1 , wherein the second region of the second conductive semiconductor region includes a trench formed toward an inside of the second region from a surface of a side which light enters, and an insulation region formed by an insulator is provided inside the trench.

6. The solid-state image pickup device according to claim 1 , further comprising:

a power source that supplies a negative voltage; and

a wiring that is connected to the power source,

wherein the second region of the second conductive semiconductor region includes a trench formed toward an inside of the second region from a surface of a side which light enters, and a conductive region formed by a conductor to which the negative voltage is applied through the wiring is provided inside the trench.

7. The solid-state image pickup device according to claim 1 , wherein the junction plane includes striped convex and concave portions which are arranged in parallel with a light-receiving surface of the photoelectric conversion element.

8. The solid-state image pickup device according to claim 7 , wherein the striped convex and concave portions are provided in a lattice pattern.

9. A camera module comprising:

an imaging optical system that receives light from an object to form an object image; and

a solid-state image pickup device that picks up the object image formed by the imaging optical system, and

the solid-state image pickup device comprising a pixel array that comprises a two-dimensionally arranged matrix of photoelectric conversion elements corresponding to pixels of a picked-up image, each of the photoelectric conversion elements including a first conductive semiconductor region and a second conductive semiconductor region between which an uneven junction plane is formed, wherein

the second conductive semiconductor region includes:

a first second-conductive region that is provided on a surface of a side which light enters in the first conductive semiconductor region; and

a second second-conductive region that protrudes toward the first conductive semiconductor region from a junction plane between the first second-conductive region and the first conductive semiconductor region.