Electrostatic discharge protection device
An electrostatic discharge protection device may include a first conductivity type well, a second conductivity well; a first doping region and a second doping region which are formed in the first conductivity type well and have different conductivity types from each other; a third doping region and a fourth doping region which are formed in the second conductivity type well and have different conductivity types from each other; and a fifth doping region formed in the second conductivity type well between the first and second doping regions and the third and fourth doping regions.
1. An electrostatic discharge protection device comprising:
a first conductivity type well;
a second conductivity type well in contact with the first conductivity type well;
first and second doping regions formed in the first conductivity type well, connected to a first electrode in common and having different conductivity types from each other;
third and fourth doping regions formed in the second conductivity type well, connected to a second electrode in common and having different conductivity types from each other; and
a fifth doping region formed in the second conductivity type well between the first and second doping regions and the third and fourth doping regions, the fifth doping region being electrically isolated from conductive paths that are external to the electrostatic discharge protection device.
2. The electrostatic discharge protection device of claim 1 , wherein the first conductivity type well is a P conductivity type well.
3. The electrostatic discharge protection device of claim 1 , wherein the second conductivity type well is an N conductivity type well.
4. The electrostatic discharge protection device of claim 1 , wherein the second doping region is between the first doping region and the fifth doping region, and
wherein the first doping region is a P conductivity type and the second doping region is an N conductivity type.
5. The electrostatic discharge protection device of claim 4 , wherein the second doping region includes a plurality of doping regions spaced apart from one another and the plurality of doping regions spaced apart from one another are connected to the first electrode in common.
6. The electrostatic discharge protection device of claim 1 , wherein the third doping region is between the fourth doping region and the fifth doping region, and
wherein the third doping region is a P conductivity type and the fourth doping region is an N conductivity type.
7. The electrostatic discharge protection device of claim 6 , wherein the third doping region includes a plurality of doping regions spaced apart from one another and the plurality of doping regions spaced apart from one another are connected to the second electrode in common.
8. The electrostatic discharge protection device of claim 1 , wherein the fifth doping region is an N conductivity type.
9. The electrostatic discharge protection device of claim 1 , wherein the second conductivity type well is formed in the first conductivity type well.
10. The electrostatic discharge protection device of claim 1 , wherein the fifth doping region is spaced apart from the third and fourth doping regions.
11. The electrostatic discharge protection device of claim 1 , further comprising a device isolation layer formed at an interface between the first conductivity type well and the second conductivity type well.
12. The electrostatic discharge protection device of claim 1 , further comprising a device isolation layer between the fifth doping region and the third doping region and between the fifth doping region and the fourth doping region.
13. The electrostatic discharge protection device of claim 1 , further comprising a gate electrode electrically isolated from the first conductivity type well on the first conductivity type well adjacent to an interface between the first and second conductivity type wells.
14. An electrostatic discharge protection device comprising:
a semiconductor device including a first electrode, a second electrode and a gate electrode;
a capacitor connected between the second electrode and the gate electrode; and
a resistor connected between the gate electrode and the first electrode,
wherein the semiconductor device comprises:
a first conductivity type well;
a second conductivity type well in contact with the first conductivity type well;
first and second doping regions formed in the first conductivity type well, connected in common to form the first electrode and having different conductivity types from each other;
third and fourth doping regions formed in the second conductivity type well, connected in common to form the second electrode and having different conductivity types from each other;
a fifth doping region in the second conductivity type well between the first and second doping regions and the third and fourth doping regions, the fifth doping region being electrically isolated from conductive paths that are external to the electrostatic discharge protection device; and
a conductive material electrically isolated from the first conductivity type well on the first conductivity type well adjacent to an interface between the first and second conductivity type wells to form the gate electrode.
15. The electrostatic discharge protection device of claim 14 , wherein the second electrode is connected to a pad for protecting an electrostatic discharge and the first electrode is connected to a pad for leaking the electrostatic discharge.