Nanoparticles passivated with cationic metal-chalcogenide compound
Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same. A passivated nanoparticle includes: a core nanoparticle; and a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle.
1. A passivated nanoparticle comprising:
a core nanoparticle; and
a cationic metal-chalcogenide which passivates the core nanoparticle,
wherein the cationic metal-chalcogenide is fixed on a surface of the core nanoparticle, and
wherein the cationic metal-chalcogenide is selected from the group consisting of Zn 2 S 2 , Zn—Se—Se—Zn, Zn 2 Te 2 , Cu 2 S 2 , Cu 2 Se 2 , Cu 2 Te 2 , Mn 2 S 2 , Mn 2 Se 2 , Mn 2 Te 2 , Fe 2 S 2 , Fe 2 Se 2 , Fe 2 Te 2 , Co 2 S 2 , Co 2 Se 2 , Co 2 Te 2 , and mixtures thereof.
2. The passivated nanoparticle of claim 1 , wherein the core nanoparticle is a quantum dot, a metal nanocrystal (NC), a magnetic NC, an oxide NC, a nanowire, or a nanoplate.
3. The passivated nanoparticle of claim 2 , wherein the quantum dot is selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, CdHgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, Si, Ge, SiC, SiGe, and combinations thereof.
4. The passivated nanoparticle of claim 2 , wherein the quantum dot has a core-shell structure or a core-shell-shell structure.