Phase change memory in a dual inline memory module
Subject matter disclosed herein relates to management of a memory device.
1. A method of managing memory access, comprising
providing, during a portion of each of two consecutive clock cycles, an activate instruction to a dual inline memory module (DIMM) comprising at least one phase change memory (PCM) module;
providing, during the portion of each of the two consecutive clock cycles, a row address to the at least one PCM module; and
providing, during the portion of each of the two consecutive clock cycles, multiple column addresses before providing a subsequent row address to the at least one PCM module, the two consecutive clock cycles indicating a duration for accessing the multiple column addresses corresponding to different columns of a row associated with the row address of the at least one PCM module.
2. The method of claim 1 , further comprising providing one of the multiple column addresses to the DIMM immediately after providing the row address to the DIMM.
3. The method of claim 1 , further comprising:
maintaining parameters corresponding to the at least one PCM module in a basic input/output system (BIOS) of a computing platform.
4. The method of claim 3 , wherein the parameters include a value for additive latency of the at least one PCM module.
5. The method of claim 3 , wherein the DIMM forms a main memory of the computing platform.
6. The method of claim 1 , further comprising:
managing a cycling limit of the at least one PCM module by caching write data corresponding to particular addresses of the DIMM in a dynamic random access memory (DRAM) cache memory.
7. The method of claim 6 , further comprising:
selecting a memory size for the DRAM cache memory based, at least in part, on properties of the at least one PCM module.
8. The method of claim 1 , further comprising:
accessing multiple memory banks across the one or more PCM devices using bank address bits.
9. A method of managing memory access, comprising:
providing an activate command to initiate accessing a plurality of memory cells in a phase change memory (PCM) module of a dual inline memory module (DIMM) comprising the PCM module;
determining a scheduling parameter associated with accessing the plurality of memory cells in the PCM module, the scheduling parameter indicating a timing associated with providing a row address and a subsequent column address of the PCM module;
providing the row address to the at least one PCM module;
caching data associated with the row address; and
responsive to caching the data, providing a plurality of column addresses to the at least one PCM module based at least in part on the scheduling parameter.
10. The method of claim 9 , further comprising:
maintaining parameters for using additive latency in a mode register of the PCM module.
11. The method of claim 10 , further comprising
retrieving the parameters for additive latency from the mode register using a BIOS, the additive latency configured to enable providing the plurality of column addresses immediately after providing the row address to the at least one PCM module.
12. The method of claim 11 , wherein the parameters include at least one of read latency, write latency, CAS latency, internal read command to first data time, activate to internal read/write delay, and additive delay.
13. The method of claim 9 , further comprising:
maintaining parameters corresponding to the at least one PCM module in a basic input/output system (BIOS) of a computing platform.
14. The method of claim 13 , wherein the parameters are associated with using the additive latency to enable providing the plurality of column addresses immediately after providing the row address to the at least one PCM module.
15. The method of claim 9 , wherein the DIMM further comprises a DRAM module.
16. The method of claim 9 , further comprising:
caching write data corresponding to particular addresses of the DIMM in the DRAM module.
17. A method of managing memory access, comprising:
providing an activate command to initiate accessing a plurality of memory cells in a phase change memory (PCM) module of a dual inline memory module (DIMM) comprising the PCM module;
providing a row address to the at least one PCM module;
providing a plurality of column addresses to the at least one PCM module immediately after providing the row address; and
managing wear of PCM cells of the at least one PCM module by caching write data corresponding to particular addresses of the DIMM in the DRAM module to limit a number of write cycles a particular PCM cell receives below a cycling limit.