IP Library Granted Patent US 9,285,289
Granted Patent B2
US 9,285,289 · App. 14/099,149 · Granted Mar 15, 2016

Pressure sensor with built-in calibration capability

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Quick Facts
Patent No.
US 9,285,289
App. No.
14/099,149
Granted
Mar 15, 2016
Kind
B2
Abstract

A MEMS pressure sensor ( 70 ) includes a sense cell ( 80 ), a test cell ( 82 ), and a seal structure ( 84 ). The test cell includes a test cavity ( 104 ), and the seal structure ( 84 ) is in communication with the test cavity, wherein the seal structure is configured to be breached to change an initial cavity pressure ( 51 ) within the test cavity ( 104 ) to ambient pressure ( 26 ). Calibration methodology ( 180 ) entails obtaining ( 184 ) a test signal ( 186 ) from the test cell prior to breaching the seal structure, and obtaining ( 194 ) another test signal ( 196 ) after the seal structure is breached. The test signals are used to calculate a sensitivity ( 200 ) of the test cell, the calculated sensitivity is used to estimate the sensitivity ( 204 ) of the sense cell, and the estimated sensitivity ( 204 ) can be used to calibrate the sense cell.

Claims (46)

1. A microelectromechanical systems (MEMS) pressure sensor comprising:

a sense cell; and

a test cell, said sense and test cells being formed in proximity to one another on a common substrate, said test cell having a test cavity and a seal structure in communication with said test cavity, wherein each of said sense and test cells is sensitive to ambient pressure, said test cavity exhibits an initial cavity pressure when said seal structure is unbreached, and when said seal structure is breached said initial cavity pressure is changed to said ambient pressure, wherein said seal structure comprises a seal membrane spaced apart from said underlying substrate to produce a seal structure cavity and a channel interposed between said test cavity and said seal structure cavity, and said seal membrane is breached to change said initial cavity pressure within said test cavity to said ambient pressure.

2. A MEMS pressure sensor as claimed in claim 1 wherein said ambient pressure is atmospheric pressure, and said test cell is utilized to estimate a sensitivity of said sense cell without application of a pressure stimulus that is greater than said atmospheric pressure.

3. A MEMS pressure sensor as claimed in claim 1 further comprising;

a signal line in communication with said test cell;

said test cell is configured to produce a first sense signal via said signal line in response to said ambient pressure prior to said seal structure being breached; and

said test cell is configured to produce a second sense signal via said signal line after said seal structure is breached.

4. A MEMS pressure sensor as claimed in claim 1 wherein said sense cell includes a sense cavity, and each of said sense and test cavities exhibits said initial cavity pressure prior to said seal structure being breached.

5. A MEMS pressure sensor as claimed in claim 4 wherein said initial cavity pressure is at approximately vacuum.

6. A MEMS pressure sensor as claimed in claim 1 wherein said sense cell includes a sense cavity, and said test cavity is physically isolated from said sense cavity of said sense cell.

7. A MEMS pressure sensor as claimed in claim 1 wherein:

said sense cell includes a sense diaphragm overlying and spaced apart from said substrate to produce a sense cavity; and

said test cell includes a test diaphragm overlying and spaced apart from said substrate to produce said test cavity, wherein said sense diaphragm, said test diaphragm, and said seal membrane are formed in a common structural layer.

8. A MEMS pressure sensor as claimed in claim 1 further comprising:

a set of sense cells formed on said substrate, said set of sense cells including said sense cell; and

a set of test cells formed on said substrate, said set of test cells including said test cell.

9. A MEMS pressure sensor as claimed in claim 8 wherein said set of test cells is configured in an interleaved arrangement with said set of sense cells.

10. A MEMS pressure sensor as claimed in claim 8 wherein each of said test cells within said set of test cells has said test cavity and said seal structure is in communication with each said test cavity, such that said initial cavity pressure within said each test cavity changes to said ambient pressure when said seal structure is breached.

11. A method comprising:

forming a sense cell of a microelectromechanical systems (MEMS) pressure sensor on a substrate, said sense cell having a sense cavity;

forming a test cell of said MEMS pressure sensor on said substrate in proximity to said sense cell, said test cell having a test cavity, each of said sense and test cavities exhibiting an initial cavity pressure, said test cavity being physically isolated from said sense cavity, and each of said sense and test cells being sensitive to ambient pressure; and

forming a seal structure in communication with said test cavity, wherein said seal structure is configured to be breached to change said initial cavity pressure within said test cavity to said ambient pressure, with said sense cavity remaining at said initial cavity pressure, wherein said forming said seal structure comprises:

forming a seal membrane overlying and spaced apart from said substrate to produce a seal structure cavity; and

forming a channel interposed between said test cavity and said seal structure cavity.

12. A method as claimed in claim 11 wherein:

said forming said sense cell includes forming a sense diaphragm overlying and spaced apart from said substrate to produce said sense cavity; and

said forming said test cell includes forming a test diaphragm overlying and spaced apart from said substrate to produce said test cavity, wherein said sense diaphragm, said test diaphragm, and said seal membrane are formed in a common structural layer.

13. A method as claimed in claim 11 further comprising:

obtaining a first sense signal between an electrode and a test diaphragm of said test cell in response to said ambient pressure;

breaching said seal membrane to change said initial cavity pressure within said test cavity to said ambient pressure; and

obtaining a second sense signal between said electrode and said test diaphragm following said breaching operation.

14. A method as claimed in claim 13 further comprising:

computing a test cell sensitivity of said test cell using said first and second sense signals; and

estimating a sensitivity of said sense cell using said test cell sensitivity.

15. A method comprising:

obtaining a first sense signal between a sense electrode and a test diaphragm of a test cell of a microelectromechanical systems (MEMS) pressure sensor in response to an ambient pressure, wherein said test cell includes a test cavity in which said sense electrode is located, said test cavity exhibiting an initial cavity pressure;

changing said initial cavity pressure within said test cavity to said ambient pressure, wherein said changing operation leaves said test diaphragm intact; and

obtaining a second sense signal between said sense electrode and said test diaphragm following said changing operation.

16. A method as claimed in claim 15 wherein a sense cell of said MEMS pressure sensor and said test cell are formed on a substrate in proximity to one another, and said changing operation does not change said initial cavity pressure within a sense cavity of said sense cell to said ambient pressure.

17. A method comprising:

obtaining a first sense signal between a sense electrode and a test diaphragm of a test cell of a microelectromechanical systems (MEMS) pressure sensor in response to an ambient pressure, wherein said test cell includes a test cavity in which said sense electrode is located, said test cavity exhibiting an initial cavity pressure;

changing said initial cavity pressure within said test cavity to said ambient pressure;

obtaining a second sense signal between said sense electrode and said test diaphragm following said changing operation;

computing a test cell sensitivity of said test cell using said first and second sense signals; and

estimating a sensitivity of a sense cell of said MEMS pressure sensor using said test cell sensitivity, wherein said ambient pressure is atmospheric pressure, and said estimating operation is performed without application of a pressure stimulus that is greater than said atmospheric pressure.

Assignments (32)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
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MERGER Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040652/0241 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
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From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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