Solid-state image sensor and method of manufacturing the same

1. A method of manufacturing a solid-state image sensor, comprising:

forming a first isolation region of a first conductivity type in a semiconductor layer having a first surface and a second surface, the forming the first isolation region including first implantation for implanting ions into the semiconductor layer through the first surface;

forming a plurality of charge accumulation regions of a second conductivity type different from the first conductivity type in the semiconductor layer;

performing first annealing after the first implantation;

forming an interconnection on a side of the first surface of the semiconductor layer after the first annealing; and

forming a second isolation region of the first conductivity type in the semiconductor layer, the forming the second isolation region including second implantation for implanting ions into the semiconductor layer from a side opposite to a side of the first surface, the second implantation being performed after the forming the interconnection,

wherein the first isolation region and the second isolation region are arranged between two adjacent charge accumulation regions of the plurality of charge accumulation regions.

2. The method according to claim 1 , wherein

the forming the first isolation region and the forming the plurality of charge accumulation regions are performed for a substrate including a region to be the semiconductor layer, and

the forming the second isolation region is performed after thinning the substrate having undergone the forming the first isolation region and the forming the plurality of charge accumulation regions.

3. The method according to claim 1 , further comprising

performing second annealing after the forming the second isolation region.

4. The method according to claim 3 , wherein

the first annealing is performed by a furnace annealing method or an rapid thermal annealing method, and

the second annealing is performed by a laser annealing method or a flash lamp annealing method.

5. The method according to claim 1 , wherein

the number of times of ion implantation for forming the second isolation region in the forming the second isolation region is smaller than the number of times of ion implantation for forming the first isolation region in the forming the first isolation region.

6. The method according to claim 1 , wherein

highest ion implantation energy used in the forming the first isolation region is higher than highest ion implantation energy used in the forming the second isolation region.

7. The method according to claim 1 , wherein

a dimension of the first isolation region in a depth direction of the semiconductor layer is larger than a dimension of the second isolation region in the depth direction.

8. The method according to claim 1 , further comprising

forming a plurality of microlenses above the side of the semiconductor layer which is opposite to the side of the first surface of the semiconductor layer,

wherein the plurality of microlenses are arranged so that one of the plurality of microlenses is assigned to each charge accumulation region pair including two charge accumulation regions, and

a potential barrier formed by the first isolation region and the second isolation region which are arranged between the two charge accumulation regions of the charge accumulation region pair is lower than a potential barrier formed by the first isolation region and the second isolation region which are arranged between the charge accumulation region pair and another charge accumulation region pair.