Mounting flexure contacts

1. A device comprising:

a flexure comprised of a first material and interconnecting two structures;

a trench disposed in the flexure and separating the first material into a first portion and a second portion thereof;

a second material disposed in the trench and extending over a top portion of the first material;

a third material disposed on the second material;

wherein the trench and the second material cooperate to electrically isolate the first portion and the second portion from one another; and

wherein the flexure is configured to restrict motion along one direction while allowing motion along another direction for one of the two structures with respect to the other of the two structures.

2. The device as recited in claim 1 , wherein the third material facilitates electrical contact between a contact on one side of the flexure and an actuator on another side of the flexure.

3. The device as recited in claim 1 , wherein the trench is formed substantially perpendicular to a length of the flexure, wherein the first material is single crystalline silicon and wherein the third material is polysilicon.

4. The device as recited in claim 1 , wherein the trench is formed by a deep reactive-ion etching (DRIE) process.

5. The device as recited in claim 1 , further comprising a pad comprised of single crystalline silicon and disposed upon the first portion;

an additional trench formed through the pad;

a layer of additional material disposed within the additional trench; and

polysilicon disposed upon the layer of additional material and extending from an upper surface of the pad to a bottom surface of the pad.

6. The device as recited in claim 5 , further comprising a metal contact in electrical communication with the polysilicon, wherein the metal contact is formed upon the pad and wherein the pad and an outer frame are on opposite sides of the flexure.

7. An electronic device comprising the device of claim 1 , wherein the second material comprises oxide.

8. The device of claim 1 , further comprising:

the two structures;

an outer frame;

an actuator formed to the outer frame;

wherein the first material comprises a first semiconductor material;

wherein the flexure is formed to the outer frame, the flexure interconnecting the outer frame with a structure;

wherein the second material comprises an electrically insulating material;

wherein the third material comprises a second semiconductor material; and

wherein the outer frame comprises the one of the two structures.

9. The system as recited in claim 8 , wherein the second semiconductor material facilitates electrical contact between a contact on the flexure and the actuator.

10. The system as recited in claim 8 , wherein the trench is formed substantially perpendicular to a length of the flexure, wherein the first semiconductor material is single crystalline silicon, and wherein the second semiconductor material is polysilicon.

11. The system as recited in claim 8 , wherein the trench is formed by a deep reactive-ion etching (DRIE) process.

12. The system as recited in claim 8 , further comprising:

a pad comprised of single crystalline silicon and formed upon the first portion;

an additional trench formed through the pad;

an electrically insulating layer formed within the additional trench; and

polysilicon formed upon the electrically insulating layer within the additional trench and extending from an upper surface of the pad to a bottom surface of the pad.

13. The system as recited in claim 12 , further comprising a metal contact in electrical communication with the polysilicon, wherein the structure comprises a pad, the metal contact is formed upon the pad, and wherein the pad and the outer frame are on opposite sides of the flexure.

14. An electronic device comprising the system of claim 8 , wherein the electrically insulating layer comprises oxide.

15. A method comprising:

forming a flexure that interconnects two structures;

forming a trench within the flexure;

forming an electrically insulating layer within the trench;

forming a conductive material upon the electrically insulating layer; and

wherein the flexure is configured to restrict motion along one direction while allowing motion along another direction for one of the two structures with respect to the other of the two structures.

16. The method as recited in claim 15 , wherein:

the forming a flexure comprises forming a flexure comprised of a first semiconductor material; and

the forming a conductive material upon the electrically insulating layer comprises forming a conductive material comprised of a second semiconductor material.

17. The method as recited in claim 15 , wherein the conductive material facilitates electrical contact between a contact on one side of the flexure and an actuator on another side of the flexure.

18. A method comprising:

applying a voltage to an actuator via a trench of a flexure of the actuator;

wherein the flexure attaches the actuator to a lens barrel of a device; and

moving a structure with the actuator based on the voltage.

19. The method as recited in claim 18 , further comprising:

providing the actuator and the lens barrel;

wherein the structure comprises an optical element.

20. The method as recited in claim 18 , wherein a conductor in the trench facilitates electrical contact between a contact on one side of the flexure and the actuator on another side of the flexure.