Temperature sensing circuit and method for sensing temperature
According to one embodiment, a temperature sensing circuit is described comprising a multiplicity of transistor circuits having a multiplicity of different temperature characteristics and a circuit configured to determine a plurality of mismatch values comprising, for each transistor circuit, a mismatch value representing the temperature characteristic of the transistor circuit and to determine a temperature value using the determined plurality of mismatch values.
1. A temperature sensing circuit comprising:
a multiplicity of transistor circuits having a multiplicity of different temperature characteristics; and
a circuit configured to determine a plurality of mismatch values comprising, for each transistor circuit, a mismatch value representing the temperature characteristic of the transistor circuit and to determine a temperature value using the determined plurality of mismatch values.
2. The temperature sensing circuit of claim 1 , wherein the temperature characteristic of a transistor circuit is the dependency of a start state of the transistor circuit from temperature.
3. The temperature sensing circuit of claim 1 , wherein the mismatch value of a transistor circuit is a start state of the transistor circuit.
4. The temperature sensing circuit of claim 1 , wherein each mismatch value is a digital value.
5. The temperature sensing circuit of claim 1 , wherein each mismatch value is 0 or 1.
6. The temperature sensing circuit of claim 1 , comprising a memory storing one or more further pluralities of mismatch values, wherein each plurality of mismatch values comprises, for each transistor circuit, a mismatch value representing a temperature characteristic of the transistor circuit wherein the circuit is configured to determine the temperature value using the one or more further pluralities of mismatch values.
7. The temperature sensing circuit of claim 1 , comprising a memory storing one or more further pluralities of mismatch values, wherein each further plurality of mismatch values corresponds to a predetermined temperature and each further plurality of mismatch values comprises, for each transistor circuit, a start state of the transistor circuit at the temperature to which the further plurality of mismatch values corresponds wherein the circuit is configured to determine the temperature value using the one or more further pluralities of mismatch values.
8. The temperature sensing circuit of claim 1 , wherein the circuit is configured to determine, for each of the one or more further pluralities of mismatch values, the number transistor circuits for which the mismatch value of plurality of mismatch values is different from the mismatch value of the further plurality of mismatch values and to determine the temperature value based on the number.
9. The temperature sensing circuit of claim 1 ,
wherein at least one of the multiplicity of transistor circuits comprises a bi-stable transistor circuit.
10. The temperature sensing circuit of claim 9 ,
wherein at least one of the multiplicity of transistor circuits comprises a static random access memory cell.
11. The temperature sensing circuit of claim 1 , wherein the circuit is configured to determine the temperature value by comparing the plurality of mismatch values with the one or more further pluralities of mismatch values.
12. The temperature sensing circuit of claim 11 , wherein each mismatch value is 0 or 1 and the circuit is configured to compare the plurality of mismatch values with a further plurality of mismatch values by performing an XOR operation of the plurality of mismatch values with the further plurality of mismatch values.
13. The temperature sensing circuit of claim 1 , wherein each transistor circuit comprises two transistors and the mismatch value for the transistor circuit represents a mismatch of the temperature dependency of the transistors.
14. The temperature sensing circuit of claim 13 , wherein at least one transistor circuit of the multiplicity of transistor circuits has transistors whose temperature dependencies cross each other.
15. The temperature sensing circuit of claim 13 , wherein the transistors are field effect transistors.
16. The temperature sensing circuit of claim 15 , wherein the temperature dependency of a transistor is the dependency of the threshold voltage of the transistors from temperature.
17. The temperature sensing circuit of claim 13 ,
wherein at least one transistor circuit of the multiplicity of transistor circuits comprises a main transistor circuit having an operating point and at least one additional transistor switchably connectable to the main transistor circuit, which is configured to move the operating point when connected to the main transistor circuit, to thereby increase the probability of providing a crossing point of the temperature dependencies of the transistors of the transistor circuit.
18. The temperature sensing circuit of claim 17 ,
wherein the at least one additional transistor is switchably connectable in parallel to the main transistor circuit.
19. A method for sensing temperature comprising:
determining a plurality of mismatch values comprising, for each transistor circuit of a multiplicity of transistor circuits having a multiplicity of different temperature characteristics, a mismatch value representing the temperature characteristic of the transistor circuit; and
determining a temperature value using the determined plurality of mismatch values.