RESIST MATERIAL AND PATTERN FORMING METHOD USING SAME

1 . A resist material to be used in an imprint process, comprising:

a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group;

a dendrimer having at least two reactive groups for photo-cationic polymerization; and

a photo-acid generator as a polymerization initiator.

2 . The material of claim 1 , wherein the material comprises:

50% or more and 90% or less by weight of the diluent monomer;

5% or more and 50% or less by weight of the dendrimer; and

0.3% or more and 10% or less by weight of the polymerization initiator.

3 . The material of claim 1 , wherein the dendrimer has a vinyl ether group, an epoxy group or an oxetanyl group as the reactive groups for photo-cationic polymerization.

4 . The material of claim 1 , wherein the diluent monomer having the hydroxyl group and the vinyl ether group is represented by general formula Ia:

wherein R is a hydrocarbon chain.

5 . The material of claim 1 , wherein the diluent monomer having the hydroxyl group and the epoxy group is represented by general formula Ib:

wherein R 1 is a hydrocarbon chain.

6 . The material of claim 1 , wherein the diluent monomer having the hydroxyl group and the oxetanyl group is represented by general formula Ic:

wherein each of R 2 and R 3 is a hydrocarbon chain.

7 . A resist material to be used in an imprint process, comprising:

a diluent monomer having a vinyl ether group and a hydroxyl group;

a dendrimer having at least two reactive groups for photo-radical polymerization; and

an acid-and-radical generator as a polymerization initiator.

8 . The material of claim 7 , wherein the acid-and-radical generator is an onium salt.

9 . The material of claim 7 , wherein the material comprises:

50% or more and 90% or less by weight of the diluent monomer;

5% or more and 50% or less by weight of the dendrimer; and

0.3% or more and 10% or less by weight of the polymerization initiator.

10 . The material of claim 7 , wherein the dendrimer has an acryloyl group as the reactive groups for photo-radical polymerization.

11 . The material of claim 7 , wherein the diluent monomer having the vinyl ether group and the hydroxyl group is represented by general formula Ia:

wherein R is a hydrocarbon chain.

12 . A pattern forming method comprising:

providing, on a substrate, a resist material which comprises a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group, a dendrimer having at least two reactive groups for photo-cationic polymerization, and a photo-acid generator as a polymerization initiator;

imprinting a template having concave-convex shape patterns against the resist material;

curing the resist material; and

releasing the template from the cured resist material.

13 . The method of claim 12 , wherein the resist material comprises:

50% or more and 90% or less by weight of the diluent monomer;

5% or more and 50% or less by weight of the dendrimer; and

0.3% or more and 10% or less by weight of the polymerization initiator.

14 . The method of claim 12 , wherein the dendrimer has a vinyl ether group, an epoxy group or an oxetanyl group as the reactive groups for photo-cationic polymerization.

15 . The method of claim 12 , wherein the resist material is provided on an adhesion film on the substrate.

16 . The method of claim 12 , wherein the resist material is cured by irradiating the resist material with an ultraviolet ray.

17 . A pattern forming method comprising:

providing, on a substrate, a resist material which comprises a diluent monomer having a vinyl ether group and a hydroxyl group, a dendrimer having at least two reactive groups for photo-radical polymerization, and an acid-and-radical generator as a polymerization initiator;

imprinting a template having concave-convex shape patterns against the resist material;

curing the resist material; and

releasing the template from the cured resist material.

18 . The method of claim 17 , wherein the acid-and-radical generator is an onium salt.

19 . The method of claim 17 , wherein the material comprises:

50% or more and 90% or less by weight of the diluent monomer;

5% or more and 50% or less by weight of the dendrimer; and

0.3 or more and 10% or less by weight of the polymerization initiator.

20 . The method of claim 17 , wherein the dendrimer has an acryloyl group as the reactive groups for photo-radical polymerization.