Display device
A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
1. A method of manufacturing a display device where a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the method comprising the steps of:
forming the conductive layer which has a gate electrode of a thin film transistor connected to a gate signal line; and
converting a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode into an electrically conductive region by performing processing for selectively forming a region with a high carrier concentration and a region with a low carrier concentration in a separated manner using a mask pattern.
2. The method of manufacturing a display device according to claim 1 , wherein the processing is any one selected from a group consisting of light irradiation, thermal annealing, the implantation of ion and impurity doping, or a combination of the processings selected from the group.
3. The method of manufacturing a display device according to claim 1 , wherein the mask pattern is formed by a photolithography process which uses a photoresist.
4. The method of manufacturing a display device according to claim 1 , wherein the mask pattern is an electrode pattern.
5. A method of manufacturing a display device where a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the method comprising the steps of:
forming a mask pattern in a region other than a region with a high carrier concentration in a region of a surface of the transparent oxide layer; and
performing processing for improving a carrier concentration in a region of the transparent oxide layer where the mask pattern is not formed.
6. The method of manufacturing a display device according to claim 5 , wherein the processing for improving the carrier concentration is any one selected from a group consisting of light irradiation, thermal annealing, implantation of ion and impurity doping, or a combination of processings selected from the group.
7. A method of manufacturing a display device where a transparent oxide layer and a semiconductor layer are formed on a pixel region on a substrate with either one of the transparent oxide layer and the semiconductor layer forming an upper layer, and an insulating film and a conductive layer are sequentially stacked on either one of the transparent oxide layer and the semiconductor layer, the method comprising the steps of:
forming the conductive layer which has a gate electrode of a thin film transistor connected to a gate signal line; and
converting the transparent oxide layer having an opening portion or a notched portion in at least a channel region portion directly below the gate electrode into an electrically conductive region by performing processing for selectively forming a region with a high carrier concentration and a region with a low carrier concentration in a separated manner using a mask pattern; and
forming the semiconductor layer in the opening portion or the notched portion of the transparent oxide layer and connecting the semiconductor layer to the source region portion and the drain region portion.
8. The method of manufacturing a display device according to claim 7 , wherein the processing for converting a region into an electrically conductive region is any one selected from a group consisting of light irradiation, thermal annealing, implantation of ion and impurity doping, or a combination of the processings selected from the group.