IP Library Granted Patent US 9,196,760
Granted Patent B2
US 9,196,760 · App. 14/110,222 · Granted Nov 24, 2015

Methods for producing complex films, and films produced thereby

Inventors: Chad E. Duty (Loudon, TN); Charlee J C Bennett (Knoxville, TN); Ji-Won Moon (Oak Ridge, TN); Tommy J. Phelps (Knoxville, TN); Craig A. Blue (Knoxville, TN); Quanqin Dai (Knoxville, TN); Michael Z. Hu (Knoxville, TN); Ilia N. Ivanov (Knoxville, TN); Gerald E. Jellison, Jr. (Oak Ridge, TN); Lonnie J. Love (Knoxville, TN); Ronald D. Ott (Knoxville, TN); Chad M. Parish (Knoxville, TN); Steven Walker (Memphis, TN)
Assignee: UT-BATTELLE, LLC
H01L31/0232C12P3/00H01L21/02521H01L21/02568H01L21/02587H01L21/02601H01L21/02628H01L21/02656
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Quick Facts
Patent No.
US 9,196,760
App. No.
14/110,222
Granted
Nov 24, 2015
Kind
B2
Abstract

A method for producing a film, the method comprising melting a layer of precursor particles on a substrate until at least a portion of the melted particles are planarized and merged to produce the film. The invention is also directed to a method for producing a photovoltaic film, the method comprising depositing particles having a photovoltaic or other property onto a substrate, and affixing the particles to the substrate, wherein the particles may or may not be subsequently melted. Also described herein are films produced by these methods, methods for producing a patterned film on a substrate, and methods for producing a multilayer structure.

Claims (36)

1. A method for producing a film, the method comprising:

(i) producing precursor particles from microbes, wherein said precursor particles have a size of up to 100 microns and a composition comprising at least one element selected from S, Se, and Te and at least two elements selected from Cu, Fe, Zn, Sn, Cd, In, Ga, and Al;

(ii) disposing said precursor particles on a substrate to form a layer of said precursor particles on said substrate; and

(iii) melting said layer of precursor particles on said substrate until at least a portion of the melted particles are planarized and merged in said film.

2. The method of claim 1 , wherein said film is continuous.

3. The method of claim 1 , wherein said method further comprises depositing at least a second film over said film to produce a multilayer structure, wherein the at least two overlaid films are different in composition or structure.

4. The method of claim 1 , wherein said precursor particles have a composition that exhibits a photovoltaic property.

5. The method of claim 1 , wherein said precursor particles have a composition according to the formula:

Cu(In x Ga 1-x )X 2   (1)

wherein x is an integral or non-integral numerical value of or greater than 0 and less than or equal to 1, X represents at least one element selected from S, Se, and Te, and the relative molar ratio of Cu can diverge from 1.

6. The method of claim 1 , wherein said precursor particles have a kesterite-type composition according to the formula:

M 3 SnX 4   (2)

wherein M represents at least one chalcophile metal other than Sn, and X represents at least one element selected from S, Se, and Te.

7. The method of claim 1 , wherein said method further comprises adjusting the stoichiometric ratio of elements in the film by a corresponding adjustment in the stoichiometric ratio of elements in the precursor particles.

8. The method of claim 1 , wherein said melting is achieved by subjecting said layer of precursor particles to a pulse of thermal energy having an intensity and duration of time effective for melting at least a portion of said precursor particles to produce said film.

9. The method of claim 8 , wherein the pulse has a duration of up to 1 second.

10. The method of claim 1 , wherein said film possesses a degree of porosity.

11. The method of claim 10 , wherein said degree of porosity is adjusted by adjusting the duration of time of said pulse of thermal energy.

12. The method of claim 1 , wherein said layer of precursor particles is formed by spraying a liquid suspension of said precursor particles on said substrate.

13. The method of claim 12 , wherein said spraying is provided by sonospraying.

14. The method of claim 12 , wherein said spraying is provided by inkjet spraying.

15. A method for producing a pattern on a substrate, the method comprising subjecting a select portion of a layer of precursor particles to a pattern-wise pulse of thermal energy that pattern-wise melts said select portion of precursor particles to an extent that the melted particles are planarized and merged in the portion of said layer subjected to said pulse to produce said pattern in said layer, followed by removal of precursor particles not exposed to said pattern-wise pulse of thermal energy, wherein said pattern-wise pulse of thermal energy is produced by patterning said pulse of thermal energy with a patterned mask, and wherein said layer of precursor particles is produced by (i) producing precursor particles from microbes, wherein said precursor particles have a size of up to 100 microns and a composition comprising at least one element selected from S, Se, and Te and at least two elements selected from Cu, Fe, Zn, Sn, Cd, In, Ga, and Al; and (ii) disposing said precursor particles on said substrate to form said layer of said precursor particles.

16. A method for producing a pattern on a substrate, the method comprising producing a patterned layer of precursor particles, and melting said precursor particles until the melted particles are planarized and merged, wherein said precursor particles are produced from microbes and have a size of up to 100 microns and a composition comprising at least one element selected from 5, Se, and Te and at least two elements selected from Cu, Fe, Zn, Sn, Cd, In, Ga, and Al.

17. The method of claim 16 , wherein said patterned layer of precursor particles is produced by ink-jet printing of said precursor particles to form a pattern of said precursor particles.

18. The method of claim 17 , wherein said ink-jet printing pattern-wise deposits at least two different types of particles in separate regions of the patterned layer.

19. A method for producing a multilayer structure, the method comprising:

(i) subjecting a select portion of a first layer of precursor particles to a pattern-wise pulse of thermal energy that pattern-wise melts said select portion of precursor particles to an extent that the melted particles are planarized and merged in the portion of said first layer subjected to said pulse to produce a pattern in said first layer, followed by removal of precursor particles not exposed to said pattern-wise pulse of thermal energy, wherein said pattern-wise pulse of thermal energy is produced by patterning said pulse of thermal energy with a patterned mask;

(ii) depositing a second layer of precursor particles on said first layer; and

(iii) subjecting at least a portion of said second layer of precursor particles to a pulse of thermal energy to melt at least a portion of said second layer of precursor particles to an extent that the melted particles are planarized and merged;

wherein the precursor particles in at least one of the first or second layer of precursor particles are produced from microbes and have a size of up to 100 microns and a composition comprising at least one element selected from S, Se, and Te and at least two elements selected from Cu, Fe, Zn, Sn, Cd, In, Ga, and Al.

20. A method for producing a multilayer structure, the method comprising:

(i) producing a patterned layer of precursor particles, by ink-jet printing of said precursor particles;

(ii) melting said patterned layer of precursor particles until the melted particles are planarized and merged to form a patterned first layer;

(iii) depositing a second layer of precursor particles on said patterned first layer; and

(iv) subjecting at least a portion of said second layer of precursor particles to a pulse of thermal energy to melt at least a portion of said second layer of precursor particles to an extent that the melted particles are planarized and merged;

wherein the precursor particles in at least one of the first or second layer of precursor particles are produced from microbes and have a size of up to 100 microns and a composition comprising at least one element selected from S, Se, and Te and at least two elements selected from Cu, Fe, Zn, Sn, Cd, In, Ga, and Al.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 5, 2015
From: BENNETT, CHARLEE J.C.; WALKER, STEVEN; DAI, QUANQIN
To: OAK RIDGE ASSOCIATED UNIVERSITIES
Reel/Frame 036727/0107 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 5, 2015
From: OAK RIDGE ASSOCIATED UNIVERSITIES
To: UT-BATTELLE, LLC
Reel/Frame 036727/0149 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 5, 2015
From: JELLISON, GERALD E., JR.; HU, MICHAEL Z.; LOVE, LONNIE J.; PHELPS, TOMMY J.; BLUE, CRAIG A.; OTT, RONALD D.; DUTY, CHAD E.; PARISH, CHAD M.; IVANOV, ILIA N.; MOON, JI WON
To: UT-BATTELLE, LLC
Reel/Frame 036727/0315 →
CONFIRMATORY LICENSE Recorded Sep 16, 2014
From: UT-BATTELLE, LLC
To: U.S. DEPARTMENT OF ENERGY
Reel/Frame 033747/0711 →
Continuity (3)
Provisional Application 61473385 · Apr 8, 2011
Provisional Application 61593394 · Feb 1, 2012
Related Publication 20140220724A1 · Aug 7, 2014