Sputtering target and method for producing same
View Patent ↗Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 20 to 40 at % of Ga, 0.1 to 3 at % of Sb, and the balance composed of Cu and unavoidable impurities. A method for producing the sputtering target includes a step of producing a starting material powder that is obtained by pulverizing at least Cu, Ga and Sb as simple substances or an alloy that contains two or more of these elements; and a step of subjecting the starting material powder to hot processing in a vacuum, in an inert atmosphere or in a reducing atmosphere, wherein Ga is contained in the starting material powder in the form of a Cu—Ga alloy or in the form of a Ga—Sb alloy.
1. A sputtering target having a component composition containing 20 to 40 at % of Ga, 0.1 to 3 at % of Sb, and the balance composed of Cu and unavoidable impurities.
2. The sputtering target according to claim 1 , wherein the sputtering target has a structure including at least one of a Sb simple substance or a compound including Sb and Cu within crystal grains or grain boundaries of an alloy phase mainly containing a Cu—Ga alloy.
3. The sputtering target according to claim 1 , wherein Ga in the sputtering target material is contained in the form of a Cu—Ga binary alloy.
4. The sputtering target according to claim 1 , wherein Na is contained as an NaF compound, an Na 2 S compound, or an Na 2 Se compound and Na is contained in 0.05 to 2 at % with respect to all metal elements in the sputtering target.
5. A method for producing the sputtering target according to claim 1 , the method comprising:
a step of producing a starting material powder that is obtained by pulverizing at least Cu, Ga and Sb as simple substances or an alloy that contains two or more of these elements; and
a step of subjecting the starting material powder to hot processing in a vacuum, in an inert atmosphere or in a reducing atmosphere,
wherein Ga is contained in the starting material powder in the form of a Cu—Ga alloy or in the form of a Ga—Sb alloy.
6. A method for producing the sputtering target according to claim 4 , the method comprising:
a step of producing a starting material powder that is obtained by preparing at least Cu, Ga and Sb as simple substances or an alloy that contains two or more of these elements as metal powder and mixing the metal powder with NaF powder, Na 2 S powder, or Na 2 Se powder; and
a step of subjecting the starting material powder to hot processing in a vacuum, in an inert atmosphere or in a reducing atmosphere,
wherein Ga is contained in the starting material powder in the form of a Cu—Ga alloy or in the form of a Ga—Sb alloy.